List of Articles Transistor Open Access Article Abstract Page Full-Text 1 - First principle study of the effect of defects on performance of single-molecule pentacene field effect transistors Bahniman Ghosh Akash Gramin 10.1007/s40094-015-0182-8 Open Access Article Abstract Page Full-Text 2 - Low-Power Differential Voltage-Controlled Ring Oscillator Based on Carbon Nanotube Field-Effect Transistor (CNTFET) Saba Naseri Akbar 10.30495/jce.2023.1996352.1223 Open Access Article Abstract Page Full-Text 3 - Quadruple analog multiplier with high-frequency response Hamid Bashi Seyed Hadi Mosavi Abolfazl Amiri Open Access Article Abstract Page Full-Text 4 - Simulation and investigation of parameters affecting the reduction of power consumption in multiplication circuits using CNT transistor technology abdolrasoul moghateli hosssein momenzadeh Mohammad Nader Kakai Open Access Article Abstract Page Full-Text 5 - Simulation and fabrication of 3.5W 8.8-9.2 GHz power amplifier mehdi Forouzanfar Open Access Article Abstract Page Full-Text 6 - Design and simulation of an Improved NEMFET with Low Leakage Current and Sub-threshold Swing Nastaran Jafari Farshad Babazadeh Zahra Ahangari Open Access Article Abstract Page Full-Text 7 - Simulation and Optimization of Dual Gate - Dual Material Tunnel Transistor Reza Talebzadeh Javad Hasanvand Ali Mir 10.30486/teeges.2022.1966315.1032 Open Access Article Abstract Page Full-Text 8 - Design and Simulation of a Low-Power Static Random-Access Memory (SRAM) Cell Based on FinFET Transistor Fatemeh Zolfaghari Sichani Mohammad Rouhollah Yazdani Atefeh Salimi Maryam Monemian 10.30486/TEEGES.2024.904827 Open Access Article Abstract Page Full-Text 9 - A W-band Simultaneously Matched Power and Noise Low Noise Amplifier Using CMOS 0.13µm Mahmoud Mohammad-Taheri Open Access Article Abstract Page Full-Text 10 - The Analysis of Coulomb Blockade in Fullerene Single Electron Transistor at Room Temperature Vahideh KhademHosseini Mohammad Taghi Ahmadi Saeid Afrang Razali Ismail 10.22034/jna.2017.02.004 Open Access Article Abstract Page Full-Text 11 - Performance Investigation of Pentacene Based Organic Double Gate Field Effect Transistor and its Application as an Ultrasensitive Biosensor Mohammad Reza Jouharchi Zahra Ahangari Farshad Babazadeh 10.22034/jna.2020.1884903.1177 Open Access Article Abstract Page Full-Text 12 - Performance Optimization and Sensitivity Analysis of Junctionless FinFET with Asymmetric Doping Profile Zahra Ahangari Ehsan Asadi Seied Ali Hosseini 10.22034/jna.2020.1898545.1208 Open Access Article Abstract Page Full-Text 13 - Performance Investigation of Pentacene Based Organic Double Gate Field Effect Transistor and its Application as an Ultrasensitive Biosensor Mohammad Reza Jouharchi zahra ahangari Farshad Babazadeh 10.22034/jna.2020.677394 Open Access Article Abstract Page Full-Text 14 - Effects of Line Defect on Electronic Transport of Double Gate Armchair Graphene Nanoribbon Field Effect Transistors: a Simulation Study Mohammad Bagher Nasrollahnejad Parviz Keshavarzi‎ Open Access Article Abstract Page Full-Text 15 - A Review of Single Electron Transistors Yaghoob Mohammadmoradi Nader Javadifar Atila Skandarnezhad Open Access Article Abstract Page Full-Text 16 - A New 2-input CNTFET-Based XOR Cell With Ultra-Low Leakage Power For Low-Voltage and Low-Power Full Adders Amir Baghi Rahin Vahid Baghi Rahin Open Access Article Abstract Page Full-Text 17 - Design and Simulation of a Bulk Driven Operational Transconductance Amplifier Based on CNTFET Technology Sayed Mohammad Ali Zanjani Mostafa Parvizi Open Access Article Abstract Page Full-Text 18 - Design of a Low Power Temperature Sensor Based on Sub-Threshold Performance of Carbon Nanotube Transistors with an Inaccuracy of 1.5ºC for the range of -30 to 125ºC Sayed Mohammad Ali Zanjani Masoumeh Aalipour Mostafa Parvizi Open Access Article Abstract Page Full-Text 19 - A 0.5 V Operational Transconductance Amplifier Based on Dynamic Threshold-Voltage MOSFET and Floating Gate MOSFET Inverters in 180 nm CMOS Technology Amir Baghi Rahin Vahid Baghi Rahin Open Access Article Abstract Page Full-Text 20 - Ultra low voltage and low power 4-2 compressor using FinFET transistors Amir Baghi Rahin Vahid Baghi Rahin Open Access Article Abstract Page Full-Text 21 - Design and Simulation of a New Optimized Full-Adder Using Carbon Nano Tube Technology Abbas Asadi Aghbolaghi Mehran Emadi Open Access Article Abstract Page Full-Text 22 - Design and Implementation of MOSFET Circuits and CNTFET, Ternary Multiplier in the Field of Galois Malakeh Karimghasemi-rabori Peiman Keshavarzian Open Access Article Abstract Page Full-Text 23 - A Low Power Full Adder Cell based on Carbon Nanotube FET for Arithmetic Units Mokhtar Mohammadi Ghanatghestani Mehdi Bagherizadeh Open Access Article Abstract Page Full-Text 24 - A Low-Power and Low-Energy 1-Bit Full Adder Cell Using 32nm CNFET Technology Node Meysam Mohammadi Yavar Safaei Mehrabani Open Access Article Abstract Page Full-Text 25 - Performance Analysis of InAs/AlGaSb Heterojunction Electron-Hole Bilayer Tunnel Field Effect Transistor for Low-Power High-Speed Digital Computing Zahra Ahangari 10.82234/ijsee.2024.1074718 Open Access Article Abstract Page Full-Text 26 - Performance Optimization of an Electrostatically Doped Staggered Type Heterojunction Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate Mahdi Mohammadkhani Ghiasvand Zahra Ahangari Hamed Nematian 10.30495/jopn.2022.29617.1249 Open Access Article Abstract Page Full-Text 27 - Self-heating effect modeling of a carbon nanotube-based fieldeffect transistor (CNTFET) Kazem Pourchitsaz Mohammad Reza Shayesteh Open Access Article Abstract Page Full-Text 28 - Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor Zahra Ahangari Open Access Article Abstract Page Full-Text 29 - Analysis of Kirk Effect in Nanoscale Quantum Well Heterojunction Bipolar Transistor Laser ashkan horri Seyedeh Zahra Mirmoeini Open Access Article Abstract Page Full-Text 30 - Controlling Ambipolar Current in a Junctionless Tunneling FET Emphasizing on Depletion Region Extension Morteza Rahimian 10.30495/jopn.2023.31255.1274 Open Access Article Abstract Page Full-Text 31 - Investigating the feasibility of using P2SiS, As2GeSe and As2GeTe nanotubes in the new generation of transistors Parvin Behzadi 10.71508/crn.2024.140307081185456
