Low-Power Differential Voltage-Controlled Ring Oscillator Based on Carbon Nanotube Field-Effect Transistor (CNTFET)

Saba Naseri Akbar ¹ ( Department of Electrical Engineering, Islamshahr Branch, Islamic Azad University, Tehran, Iran )

Submited date : 2023-09-13 Accepted date : 2023-12-20

Keywords: Carbon Nanotube Field Effect Transistor (CNTFET), Power Delay Product (PDP), delay cell, Differential Voltage Controlled Ring Oscillator (DVCRO), Single Ended Ring Oscillator (SERO).,

Abstract :

Due to the better common-mode elimination of power supply voltage and sub-substrate noise, the differential ring oscillator (DRO) performs better than the single-ended ring oscillator (SERO) in both analog and digital integrated circuits. Also, it is easy to achieve high frequency performance with in-phase and quadrature outputs in a differential ring oscillator. For this purpose, in this research, the design and simulation of a three-stage differential voltage controlled circular oscillator (DVCRO) based on carbon nanotube field effect transistor (CNTFET) is presented, whose oscillation frequency can be changed by changing the control voltage of the proposed delay cell structure. A very wide range changed from 45.7 GHz to 110.18 GHz, and at the same time, its power consumption is in the range of 5.17 μW to 32.68 μW. Based on the results obtained at the supply voltage of 0.9 V, the proposed voltage controlled ring oscillator (VCRO) based on carbon nanotube field effect transistor shows promising characteristics compared to its counterpart based on metal-oxide-semiconductor field effect transistor (MOSFET). Also, it performs exceptionally well compared to other existing oscillators.

highlight:

Presentation of a new 9-transistor delay cell based on carbon nanotube field effect transistor (CNTFET)

The changeability of the delay characteristic in the proposed delay cell by changing the control voltage

Providing a three-stage differential voltage controlled oscillator (VCO) based on carbon nanotube field effect transistor in the high frequency range and beyond.

Achieving a wide adjustment range with low power consumption in the proposed voltage controlled oscillator

References:

[1] A. Moghateli,H. Momenzadeh and M. Nader Kakai, “Simulation and investigation of parameters affecting the reduction of power consumption in multiplication circuits using CNT transistor technology,” Journal of Southern Communication Engineering, vol. 10, no. 38, pp. 39-50, 2020 [in persian].

[2] A. Baghi Rahin and V. Baghi Rahin, “A new 2-input CNTFET-based XOR cell with ultra-low leakage power for low-voltage and low-power full adders,” Journal of Intelligent Procedures in Electrical Technology (JIPET), vol. 10, no. 37, pp. 2322-3871, 2019 [in persian].

[3] A. Baghi Rahin, A. Kadivarian and V. Baghi Rahin, “Design of a Full Swing 20-Transistors Full Adder Cell based on CNTFET with High Speed and Low PDP,” International Conference on Electrical Engineering (ICEE), 2022, pp.546-550, doi: 10.1109/ICEE55646.2022.9827050.

[4] B.Q. Wei, R. Vajtai and P.M. Ajayan, “Reliability and Current Carrying Capability of Carbon Nanotubes,” Appl. Phys. Lett., vol. 79, pp. 1172-1174, 2001, doi: 10.1063/1.1396632.

[5] J. Deng and H.S. P. Wong “A compact SPICE model for carbon nanotube field effect transistors including non-idealities and its application Part II: Full device model and circuit performance benchmarking”, IEEE Trans Electron Devices, vol. 54, no. 12, pp. 3195-3205, Dec 2007, doi: 10.1109/TED.2007.909043.

[6] N. Cheraghi Shirazi, E. Abiri Jahromi and R. Hamzehyan, “Investigating the performance of active vector and inductor capacitors in the resonant circuit of integrated VCOs with 0.18 µm CMOS technology,” Journal of Southern Communication Engineering, vol. 7, no. 26, 2017 [in persian].

[7] N. Cheraghi Shirazi and R. Hamzehyan,, “Evaluation of phase noise performance of voltage-controlled integrated inductors and active inductors with 0.18 µm CMOS technology,” Journal of Southern Communication Engineering, vol. 7, no. 25, 2018 [in persian].

[8] Y. Toh and J. A. McNeill, “Single-ended to differential converter for multiple-stage single-ended ring oscillators,” IEEE J. Solid-State Circuits, vol. 38, no. 1, pp. 141–145, 2003, doi: 10.1109/JSSC.2002.806262.

[9] B. Razavi, “Design of monolithic phase locked loops and clock recovery circuits: A tutorial,” in Monolithic Phase-Locked Loops and Clock Recovery Circuits: Theory and Design , IEEE, 1996, pp.1-39, doi: 10.1109/9780470545331.ch1.

[10] J. Savoj and B. Razavi, “A 10-Gb/s CMOS clock and data recovery circuit with a half-rate linear phase detector,” IEEE J. Solid-State Circuits, vol. 36, no. 5, pp. 761–768, 2001, doi: 10.1109/4.918913.

[11] B. Fahs, W. Y. A. Ahmad and P. Gamand, “A two-stage ring oscillator in 0.13 μm CMOS for UWB impulse radio,” IEEE Trans. Microwave Theory Tech., vol. 57, no. 5, pp. 1074–1082, 2009, doi: 10.1109/TMTT.2009.2017246.

[12] H. Thabet, S. Meillere, M. Masmoudi, J. Seguin, H. Barthelemy and K. Aguir, “A low power consumption CMOS differential-ringVCO for a wireless sensor,” in Proc. 9th IEEE Int. New Circuits Systems Conf., 2011, pp. 81–84, doi: 10.1109/NEWCAS.2011.5981224.

[13] D. Fathi and B. Mohammadi, “Millimeter Wave Ring Oscillator Using Carbon Nano-Tube Field Effect Transistor in 150 GHz and Beyond,” Circuits and Systems, vol. 4, no. 2, pp. 157-164, 2013, . doi: 10.4236/cs.2013.42021.

[14] A. Baghi Rahin, A. Kadivarian, S. Naseri Akber and V. Baghi Rahin, “Tunable Ring Oscillators Based on Hybrid FGMOS/CNTFET Inverters with High Frequency and Low Power,” International Conference on New Researches and Technologies in Electrical Engineering (ICNRTEE) ,University of Science and Culture (USC), Tehran, Iran, 2023.

[15] A. Baghi Rahin, A. Kadivarian and V. Baghi Rahin, “Investigation of Different Combinations of CNTFET and MOSFET in the Structure of a Hybrid Ring Oscillator,” IEEE 6th Conference on Technology in Electrical and Computer Engineering (ETECH 2021), Tafresh University, Tafresh, Iran ,2021.

[16] A. Baghi Rahin, A. Kadivarian and V. Baghi Rahin, “Extremely High Frequency and Low Power Ring Oscillators Using DG-CNTFET Transistors,” IEEE 6th Conference on Technology in Electrical and Computer Engineering (ETECH 2021), ), Tafresh University, Tafresh, Iran , 2021.

[17] A. Baghi Rahin, A. Kadivarian, S. Naseri Akbar and V. Baghi Rahin, “Tunable Millimeter Wave Ring Oscillator Using GNRFET,” The 7th National Conference of Applied Researches in Electrical, Mechanical and Mechatronics Engineering, Tehran, Iran , 2023.

[18] A. Baghi Rahin, A. Kadivarian, S. Naseri Akbar and V. Baghi Rahin, “Extremely High Frequency Voltage Controlled Ring-Oscillator Based-on NAND Gate Using CNTFET,” The 7th National Conference of Applied Researches in Electrical, Mechanical and Mechatronics Engineering, Tehran, Iran, 2023.

[19] A. Baghi Rahin, A. Kadivarian and M. Dadgar, “Ring Oscillator with Frequency Adjustment and Reconfiguration Capability Using Switched NAND-NOR,” 12th Majlesi Conference on Electrical Engineering, Isfahan, Iran , 2023.

[20] A. Baghi Rahin, A. Kadivarian and M. Dadgar, “GNRFET-based Voltage Controlled Ring Oscillator Using GDI NAND Gate,” 12th Majlesi Conference on Electrical Engineering, Isfahan, Iran, 2023.

[21] A. Baghi Rahin, M.H. Akhtarzadeh, A.S. Alijanpour and V. Baghi Rahin, “Tunable Ring Oscillator Based on DTMOS and FGMOS Inverters with High Frequency and Low Power in 180 nm CMOS Technology,” 8th National Conference on Modern Studies and Resech in Computer, Electrical, and Mechanical Sciences of Iran, Tehran, Iran, 2022.

[22] J. Jalil, M. B. I. Reaz and M. A. M. Ali, “CMOS Differential Ring Oscillators: Review of the Performance of CMOS ROs in Communication Systems,” in IEEE Microwave Magazine, vol. 14, no. 5, pp. 97-109, July-Aug. 2013, doi: 10.1109/MMM.2013.2259401.

[23] Y. Sun and M. Jiang, “A low power, and wide tuning range ring voltage controlled oscillator,” IEEE International Conference on Consumer Electronics-Asia (ICCE-Asia), Seoul, Korea (South), 2016, pp. 1-4. doi: 10.1109/ICCE-Asia.2016.7804742.

[24] S. Kamran and N. Ghaderi, “A novel high speed CMOS pseudo-differential ring VCO with wide tuning control voltage range,” Iranian Conference on Electrical Engineering (ICEE), Tehran, Iran, 2017, pp. 201-204. doi: 10.1109/IranianCEE.2017.7985438.

[25] S. Askari and M. Saneei, “Design and analysis of differential ring voltage controlled oscillator for wide tuning range and low power applications,” Int. J. Circuit Theory Appl., vol. 47, no. 2, pp. 204-216, Feb. 2019, doi: 10.1002/cta.2582.

[26] A. Safari and M. Dousti, “Ring oscillators based on monolayer Graphene FET,” Analog Integrated Circuits and Signal Processing, vol. 102, pp. 637–644, 2020, doi: 10.1007/s10470-020-01624-x.

[27] S. Rahane and A. Kureshi, “A low power and linear voltage controlled oscillator using hybrid CMOS-CNFET technology,” International Journal of Applied Engineering Research, vol. 12, no. 9, pp. 1969–1973, 2017.

[28] H. Sarbazi, R. Sabbaghi‐Nadooshan and A. Hassanzadeh, “A CNT based VCO with extremely low phase noise and wide frequency range for PLL application,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol. 34, no. 5, 2021, doi:10.1002/jnm.2891.

[29] A. Taghavi, C. Carta, T. Meister, F. Ellinger, M. Claus and M. Schroter, “A CNTFET Oscillator at 461 MHz,” IEEE Microwave and Wireless Components Let-ters, vol. 27, no. 6, 2017, doi:10.1109/LMWC.2017.2701312.