نوسان‌ساز حلقوی تفاضلی کنترل‌شده با ولتاژ توان پایین مبتنی بر ترانزیستورهای اثر میدان نانولوله کربنی
محورهای موضوعی : نانوالکترونیک
1 - گروه برق، دانشکده فنی و مهندسی، واحد اسلامشهر، دانشگاه آزاد اسلامی، تهران، ایران
کلید واژه: ترانزیستور اثر میدان نانولوله کربنی (CNTFET), حاصل‌ضرب تأخیر در توان (PDP), سلول تأخیر, نوسان‌ساز حلقوی تفاضلی کنترل‌شده با ولتاژ (DVCRO), نوسان‌ساز حلقوی تک‌سر (SERO).,
چکیده مقاله :
به دلیل حذف حالت مشترک بهتر تغذیه و نویز زیر بستر، نوسان‌ساز حلقوی تفاضلی (DRO) عملکرد بهتری نسبت به نوسان‌ساز حلقوی تک‌سر (SERO) هم در مدارات مجتمع آنالوگ و هم مدارات دیجیتال از خود نشان می‌دهد. همچنین، دستیابی به عملکرد فرکانس بالا با خروجی‌های هم‌فاز و متعامد در نوسان‌ساز حلقوی تفاضلی آسان است. بدین منظور در این پژوهش، طراحی و شبیه‌سازی یک نوسان‌ساز حلقوی تفاضلی کنترل‌شده با ولتاژ (DVCRO) سه‌طبقه بر اساس ترانزیستور اثر میدان نانولوله کربنی (CNTFET) ارائه می‌شود که فرکانس نوسان آن را با تغییر ولتاژ کنترل ساختار سلول تأخیر پیشنهادی می‌توان در بازه بسیار وسیعی از 7/45 گیگاهرتز تا 18/110 گیگاهرتز تغییر داد و درعین‌حال توان مصرفی آن در بازه 17/5 میکرو وات تا 68/32 میکرو وات باشد. بر اساس نتایج به دست آمده در ولتاژ تغذیه 9/0 ولت، نوسان‌ساز حلقوی کنترل‌شده با ولتاژ (VCRO) پیشنهادی مبتنی بر ترانزیستور اثر میدان نانولوله کربنی ویژگی‌های امیدوارکننده‌ای نسبت به همتای مبتنی بر ترانزیستور اثر میدان نیمه هادی-اکسید-فلز (MOSFET) خود نشان می‌دهد. همچنین، نسبت به سایر نوسان‌سازهای موجود عملکرد فوق‌العاده خوبی از خود نشان می‌دهد.
Due to the better common-mode elimination of power supply voltage and sub-substrate noise, the differential ring oscillator (DRO) performs better than the single-ended ring oscillator (SERO) in both analog and digital integrated circuits. Also, it is easy to achieve high frequency performance with in-phase and quadrature outputs in a differential ring oscillator. For this purpose, in this research, the design and simulation of a three-stage differential voltage controlled circular oscillator (DVCRO) based on carbon nanotube field effect transistor (CNTFET) is presented, whose oscillation frequency can be changed by changing the control voltage of the proposed delay cell structure. A very wide range changed from 45.7 GHz to 110.18 GHz, and at the same time, its power consumption is in the range of 5.17 μW to 32.68 μW. Based on the results obtained at the supply voltage of 0.9 V, the proposed voltage controlled ring oscillator (VCRO) based on carbon nanotube field effect transistor shows promising characteristics compared to its counterpart based on metal-oxide-semiconductor field effect transistor (MOSFET). Also, it performs exceptionally well compared to other existing oscillators.
ارائه یک سلول تأخیر جدید 9 ترانزیستوری مبتنی بر ترانزیستور اثر میدان نانولوله کربنی
قابل‌تغییر بودن مشخصه تأخیر در سلول تأخیر پیشنهادی به‌وسیله تغییر ولتاژ کنترل
ارائه یک نوسان‌ساز کنترل‌شده با ولتاژ تفاضلی سه‌طبقه مبتنی بر ترانزیستور اثر میدان نانولوله کربنی با فرکانس در محدوده فرکانس بالا و فراتر از آن
دستیابی به محدوده وسیع تنظیم با توان مصرفی پایین در نوسان‌ساز کنترل‌شده با ولتاژ پیشنهادی
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