نوسان‌ساز حلقوی تفاضلی کنترل‌شده با ولتاژ توان پایین مبتنی بر ترانزیستورهای اثر میدان نانولوله کربنی
الموضوعات :
1 - گروه برق، دانشکده فنی و مهندسی، واحد اسلامشهر، دانشگاه آزاد اسلامی، تهران، ایران
الکلمات المفتاحية: ترانزیستور اثر میدان نانولوله کربنی (CNTFET), حاصل‌ضرب تأخیر در توان (PDP), سلول تأخیر, نوسان‌ساز حلقوی تفاضلی کنترل‌شده با ولتاژ (DVCRO), نوسان‌ساز حلقوی تک‌سر (SERO).,
ملخص المقالة :
به دلیل حذف حالت مشترک بهتر تغذیه و نویز زیر بستر، نوسان‌ساز حلقوی تفاضلی (DRO) عملکرد بهتری نسبت به نوسان‌ساز حلقوی تک‌سر (SERO) هم در مدارات مجتمع آنالوگ و هم مدارات دیجیتال از خود نشان می‌دهد. همچنین، دستیابی به عملکرد فرکانس بالا با خروجی‌های هم‌فاز و متعامد در نوسان‌ساز حلقوی تفاضلی آسان است. بدین منظور در این پژوهش، طراحی و شبیه‌سازی یک نوسان‌ساز حلقوی تفاضلی کنترل‌شده با ولتاژ (DVCRO) سه‌طبقه بر اساس ترانزیستور اثر میدان نانولوله کربنی (CNTFET) ارائه می‌شود که فرکانس نوسان آن را با تغییر ولتاژ کنترل ساختار سلول تأخیر پیشنهادی می‌توان در بازه بسیار وسیعی از 7/45 گیگاهرتز تا 18/110 گیگاهرتز تغییر داد و درعین‌حال توان مصرفی آن در بازه 17/5 میکرو وات تا 68/32 میکرو وات باشد. بر اساس نتایج به دست آمده در ولتاژ تغذیه 9/0 ولت، نوسان‌ساز حلقوی کنترل‌شده با ولتاژ (VCRO) پیشنهادی مبتنی بر ترانزیستور اثر میدان نانولوله کربنی ویژگی‌های امیدوارکننده‌ای نسبت به همتای مبتنی بر ترانزیستور اثر میدان نیمه هادی-اکسید-فلز (MOSFET) خود نشان می‌دهد. همچنین، نسبت به سایر نوسان‌سازهای موجود عملکرد فوق‌العاده خوبی از خود نشان می‌دهد.
Presentation of a new 9-transistor delay cell based on carbon nanotube field effect transistor (CNTFET)
The changeability of the delay characteristic in the proposed delay cell by changing the control voltage
Providing a three-stage differential voltage controlled oscillator (VCO) based on carbon nanotube field effect transistor in the high frequency range and beyond.
Achieving a wide adjustment range with low power consumption in the proposed voltage controlled oscillator
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