Investigating the feasibility of using P2SiS, As2GeSe and As2GeTe nanotubes in the new generation of transistors
Subject Areas : Applications of Nanostructures
1 - Dez dam and power plant production and operation company, Andimeshk, khozestan, Iran
Keywords: Nanotube, Nanosheet, Transistor, MOSFET.,
Abstract :
This research has been done using the first-to-static method in the framework of the density functional theory and by the Quantum Espresso computing package in the generalized slope approximation. Structural properties such as lattice constant, strain energy and relative energy of formation and electronic properties such as band structure for three stack structures of P2SiS, As2GeSe and As2GeTe nanosheets and nanotubes of these compounds with stack structure (10,10) have been investigated and according to the electrical characteristics The unique nanotube of these compounds in transistors, their electrical properties have been compared with carbon nanotube. Also, for As2GeTe nanotubes, a band structure has been drawn for (4,4), (6,6), (8,8) and (10,10) structures, and then the band structure of P2SiS, As2GeSe and As2GeTe nanosheets with a band structure has been drawn. Graphene has been compared. The obtained results show that the band structure of nanosheets and nanotubes of these compounds gives the band gap. Therefore, all the mentioned compounds are semiconductors. Also, by examining different diameters of As2GeTe composite nanotubes, strip structures very close to each other have been obtained. This confirms the nearly identical band gap for different diameters for As2GeTe nanotubes. Semiconductivity and band gap stability of P2SiS, As2GeSe and As2GeTe nanotubes are two important advantages of using these nanotubes instead of carbon nanotubes in transistors.
[1]properties and applications of carbon nanotube structures. Journal of nanoscience and nanotechnology, 7(4-5), 1239-1267.
[2] Li, Q. W., Li, Y., Zhang, X. F., Chikkannanavar, S. B., Zhao, Y. H., Dangelewicz, A. M., ... & Zhu, Y. T. (2007). Structure‐dependent electrical properties of carbon nanotube fibers. Advanced Materials, 19(20), 3358-3363.
[3] Gupta, N., & Dixit, A. (2021). Carbon Nanotube Field-Effect Transistors (CNFETs): Structure, Fabrication, Modeling, and Performance. In Carbon Nanomaterial Electronics: Devices and Applications (pp. 199-214). Singapore: Springer Singapore.
[4] Zahoor, F., Hanif, M., Bature, U. I., Bodapati, S., Chattopadhyay, A., Hussin, F. A., ... & Bashir, F. (2023). Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications. Physica Scripta.
[5] Luisier, M., Klinkert, C., Fiore, S., Backman, J., Lee, Y., Stieger, C., & Szabó, Á. (2023). Field-Effect Transistors Based on 2D Materials: A Modeling Perspective. Beyond-CMOS: State of the Art and Trends, 33.
[6] Sachdeva, A., Kumar, D., & Abbasian, E. (2023). A carbon nano-tube field effect transistor based stable, low-power 8T static random access memory cell with improved write access time. AEU-International Journal of Electronics and Communications, 162, 154565.
[7] Shkodra, B., Petrelli, M., Costa Angeli, M. A., Garoli, D., Nakatsuka, N., Lugli, P., & Petti, L. (2021). Electrolyte-gated carbon nanotube field-effect transistor-based biosensors: Principles and applications. Applied Physics Reviews, 8(4).
[8] Wan, H., Zhao, J., Lo, L. W., Cao, Y., Sepúlveda, N., & Wang, C. (2021). Multimodal artificial neurological sensory–memory system based on flexible carbon nanotube synaptic transistor. ACS nano, 15(9), 14587-14597.
[9] Zhu, Y. L., Yuan, J. H., Song, Y. Q., Xue, K. H., Wang, S., Lian, C., .. & Miao, X. S. (2019). Promising photocatalysts with high carrier mobility for water splitting in monolayer Ge2P4S2 and Ge2As4S2. International Journal of Hydrogen Energy, 44(39), 21536-21545.
[10] Behzadi, P., Amiri, P., & Ketabi, S. A. (2021). Electronic and optical properties of two-dimensional As2GeTe and P2SiS monolayers: Density functional study. Chemical Physics, 547, 111215.
[11] Behzadi, P., Ketabi, S. A., & Amiri, P. (2021). First-principles investigation of the electronic and optical properties of As2GeTe nanotubes. Solid State Communications, 336, 114421.
[12]P. Giannozzi, S. Baroni, N.Bonini, M.Cococcioni, R. Car,C. Cavazzoni,.(2009). "QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials".Phys. Condens. Matter 21, 395502.
[13] Behzadi, P., Amiri, P., & Ketabi, S. A. (2021). Electronic and optical properties of two-dimensional As2GeTe and P2SiS monolayers: Density functional study. Chemical Physics, 547, 111215.
[14] Amiri, P., Mokhtaripoor, N., Aliakbari, A., & Salehi, H. (2022). Ab-initio study of structural stability, electronic and optical properties of X2GeSe (X= P and Sb) monolayers. Solid State Communications, 343, 114673.
[15] Ouyang, M., Huang, J. L., Cheung, C. L., & Lieber, C. M. (2001). Energy gaps in" metallic" single-walled carbon nanotubes. Science, 292(5517), 702-705.
