Design and Simulation of a Bulk Driven Operational Transconductance Amplifier Based on CNTFET Technology

Subject Areas : Renewable energy

Sayed Mohammad Ali  Zanjani ¹ (Smart Microgrid Research Center- Najafabad Branch, Islamic Azad University, Najafabad, Iran)
Mostafa  Parvizi ² (Department of Electrical Engineering- Najafabad Branch, Islamic Azad University, Najafabad, Iran)

Received: 2020-10-08 Accepted : 2020-12-06 Published : 2021-05-22

Keywords: Low power, Carbon Nanotube Field Effect Transistor, High gain, gm/ID Technique, operational trans-conductance amplifier,

Abstract :

In this paper, a new two-stage OTA is proposed which meeting the needs of high gain, low power and low noise, and designed based on the gm/ID technique with bulk driven method. It is noteworthy that due to the limitations of CMOS technology, CNTFET technology used for the circuit designs. Moreover, to improve the linearity of the circuit, triode transistors used in both stages of amplifiers. The simulation results of the proposed OTA are performed under 1V of supply voltage and 1pF of load capacitors in the HSPICE tool. According to the simulation results, the proposed circuit consumes less than 27 µW of power and offers a high gain of 98 dB. The CMRR and PSRR values of the proposed circuit are 121 dB and 152 dB, respectively. The input referred noise is 0.92 nV/√Hz and the slew rate of the proposed circuit is 111 V/µs, which shown the better figure of merit (FOM) in compression with the previous works.  

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