Subject Areas : Journal of Optoelectronical Nanostructures
ashkan horri 1 , Seyedeh Zahra Mirmoeini 2
1 - Department of Electrical Engineering, Arak Branch, Islamic Azad University Arak, Iran
2 - Department of Electrical Engineering, Arak Branch, Islamic Azad University Arak, Iran
Keywords:
Abstract :
W. Liu, Fundamentals of III-V Devices, HBTs, MESFETs, and HFETs/HEMTs John Wiley & Sons. New York, 1999.
[2] B. Faraji B, W. Shi, D L. Pulfrey, and L. Chrostowski. Analytical modeling of the transistor laser, IEEE J. Sel. Topics Quantum Electron. 15(3) (1992, Aug.) 594-603. Available: https://ieeexplore.ieee.org/document/4839011
[3] A. Horri , S.Z. Mirmoeini, and R. Faez. Analysis of carrier dynamic effects in transistor laser, Optical Engineering. 51(2) (2012.) 024202. Available: https://spie.org/Publications/Journal/10.1117/1.OE.51.2.024202?SSO=1
[4] A. Horri , and R. Faez. Large signal analysis of double quantum well transistor laser, Optical and Quantum Electronics. 45(5) (2013.) 389-399. Available: https://link.springer.com/article/10.1007/s11082-012-9641-5
[5] M.S. Shirokov , S.V. Cherepko , D. Xiaohang , J.C.M Hwang , and D.A. Teeter. Large-signal modeling and characterization of high-current effects in InGaP/GaAs HBTs,. IEEE Trans. Microwave Theory and Techniques 50(4) (2002.) 1084-1094. Available: https://ieeexplore.ieee.org/document/993410
[6] N.G Tao and C.R Bolognesi, Kirk effect mechanism in type-II InP/GaAsSb double heterojunction bipolar transistor,. Journal of applied physics 102(6) (2007.) 064511. Available: https://aip.scitation.org/doi/10.1063/1.2783764
[7] D. Elias and D. Ritter, Kirk effect in bipolar transistors with a nonuniform dopant profile in the collector,. IEEE Electron Device Letters, 27(1) (2006.) 25-27. Available: https://ieeexplore.ieee.org/document/1561444
[8] H.K. Gummel, A self consistent iterative scheme for one-dimension steady state transistor calculation,. IEEE Transactions on Electron Devices, 11(10) (1964.) 455-465. Available: https://ieeexplore.ieee.org/document/1473752
[9] M. Feng, R. Bambery, and Jr Holonyak, Bandfilling and photon-assisted tunneling in a quantum-well transistor laser,. Applied Physics Letters, 98(12) (2011.) 123505.
Available: https://aip.scitation.org/doi/10.1063/1.3569949
[10] A. Horri, S.Z. Mirmoeini, and R Faez, The noise equivalent circuit model of quantum dot laers,. Journal of Russian Laser Research, 33(3) (2012.) 217-226. Available: https://link.springer.com/article/10.1007/s10946-012-9275-x
Analysis of Kirk Effect in Nanoscale Quantum Well Heterojunction Bipolar … * 37
[11] T. Kaneko, T. Yoshida, S. Tadano, N. Nishiyama, and S. Arai, Improvement in the current-gain of a 1.3 μm npn-AlGaInAs/InP transistor laser using a thin p-GaInAsP base layer ,. Japanese Journal of Applied physics, 55(3) (2012.) 217-226. Available: https://link.springer.com/article/10.1007/s10946-012-9275-x
[12] A. Horri, S.z. Mirmoeini, R. Faez, Large Signal Circuit Model of Two-Section Gain Lever Quantum Dot Laser,. Chinese Physics Letters, 29(11) (2012.) 114207. Available: https://iopscience.iop.org/article/10.1088/0256-307X/29/11/114207
[13] I. Taghavi, B. Namvar, M. Hosseini, and H. Kaatuzian, Large signal analysis of multiple quantum well transistor laser: Investigation of inbalanced carrier and photon density distribution ,. Journal of Applied physics, 127(13) (2020.) 133102. Available: https://link.springer.com/article/10.1007/s10946-012-9275-x
[14] Y. Li, and J.P Leburton, Base transport factor and frequency response of transistor lasers, Journal of Applied physics, 126(15) (2019.) 153103. Available: https://aip.scitation.org/doi/abs/10.1063/1.5099041?journalCode=jap
[15] J. Wun, R. Chao, Y. Wang, Y.Chen, and J. Shi, Type-II GaAs 0.5Sb0.5/Inp Uni-traveling carrier photodiodes with sub-terahertz bandwidth and high power performance under zero bias operation , Journal of Lightwave Technology, 35(4) (2017.)711-716,Available: https://ieeexplore.ieee.org/abstract/document/7562455
[16] R. Swoboda, K. S. Hormstein, H. Wile, G. Langguth, and H. Zimmermann, Bicmos-integrated photodiode exploiting drift enhancement, Optical Enginnering, 53(8),(2014.),087103,Available:https://spie.org/publications/journal/10.1117/1.OE.53.8.087103
[17] A. Ghadimi, and M. Ahmadzadeh, Effect of variation of specification o quantum well and contact length on performance of InP-based Vertical Cavity Surface Emitting Laser (VCSEL), JOURNAL of OPTOELECTRONICAL NANO STRUCTURES,5(1),(2020.),19-34,Available: http://jopn.miau.ac.ir/article_4031.html
[18] M. Riahinasab, and E. Darabi, Analytical Investigation of Frequency Behavior in Tunnel Injection Quantum Dot VCSEL , JOURNAL of
38 * Journal of Optoelectronical Nanostructures Spring 2020 / Vol. 5, No. 2
OPTOELECTRONICAL NANOSTRUCTURES, 3(2), (2020.), 65-86, Available: http://jopn.miau.ac.ir/article_4031.html