List of Articles Tunneling Open Access Article Abstract Page Full-Text 1 - Investigating the effect of geometrical asymmetry on conductance and TMR ratio in the ZnO rock salt-based MTJ: a DFT study Masoud Ansarino 10.1007/s40094-020-00380-7 Open Access Article Abstract Page Full-Text 2 - Presenting the developed model of Benish by using tunneling phenomena based on artificial neural network technique and particle swarm optimization algorithm to identifying profit manipulating companies Farhad Azadi Mehrdad GhanbarI Babak Jamshidi navid Javad Masodi Open Access Article Abstract Page Full-Text 3 - Investigation of the Structural and Electrical Properties of Star Shape Manganese Thin Films with 3-fold and 4-fold Symmetries Fatemeh Abdi Open Access Article Abstract Page Full-Text 4 - Theoretical investigation of tautomerisation of 3-Amino-1H-1,2,4-Triazol-5(4H)-One by using quantum calculations by DFT method. بهزاد چهکندی Open Access Article Abstract Page Full-Text 5 - Investigation of C-O tautomerism in a derivative of Flucytosine: A DFT study بهزاد چهکندی Open Access Article Abstract Page Full-Text 6 - Design and Realization of a Junction-less TFET for Analog and Digital Applications Based on Strain Engineering Fayzollah Khorramrouze Seyed Ali Sedigh Ziabari Ali Heydari 10.30486/mjtd.2022.695917 Open Access Article Abstract Page Full-Text 7 - Estimation of TBM Utilization with Artificial Neural Networks Hamid Reza Nejati Morteza Ahmadi Open Access Article Abstract Page Full-Text 8 - An innovative method for estimating optimal Gate work function and dielectric constant of a nanoscale DG-TFET based on analytical modeling of tunneling length in ambipolar, Off and ON states Ali Heydari Seyed Ali Sedigh Ziabari Fayzollah Khorramrouz 10.22034/jna.2020.1881749.1166 Open Access Article Abstract Page Full-Text 9 - A Feasibility Study of Vertical Dual Channel Extended Source Schottky Barrier MOSFET as a Highly Sensitive Biosensor Mahshid Farahzadi Zahra Ahangari Open Access Article Abstract Page Full-Text 10 - An innovative method for estimating optimal Gate work function and dielectric constant of a nanoscale DG-TFET based on analytical modeling of tunneling length in ambipolar Off and ON states Fayzollah Khorramrouz Seyed Ali Sedigh Ziabari Ali Heydari 10.22034/jna.2021.685452 Open Access Article Abstract Page Full-Text 11 - An innovative method for estimating optimal Gate work function and dielectric constant of a nanoscale DG-TFET based on analytical modeling of tunneling length in ambipolar, Off and ON states Fayzollah Khorramrouz Seyed Ali Sedigh Ziabari Ali Heydari 10.22034/jna.2020.680049 Open Access Article Abstract Page Full-Text 12 - A Review of Single Electron Transistors Yaghoob Mohammadmoradi Nader Javadifar Atila Skandarnezhad Open Access Article Abstract Page Full-Text 13 - Performance Analysis of InAs/AlGaSb Heterojunction Electron-Hole Bilayer Tunnel Field Effect Transistor for Low-Power High-Speed Digital Computing Zahra Ahangari 10.30495/ijsee.2023.1988303.1268 Open Access Article Abstract Page Full-Text 14 - Investigating the Effect of Tunneling Incentive, Intangible Assets and Profitability on Transfer Pricing Ali Khoshnood Abbasali Haghparast Reza sotudeh Open Access Article Abstract Page Full-Text 15 - The Effect of Annealing Temperature on The Structure and Corrosion Behavior of Nano-Quasicrystalline Al72Ni13Cr15 alloy Synthesized by Mechanical Alloying M. Amini R. Amini M. Haghighi M. Alizadeh M.A. Zareh Z. Nemati Open Access Article Abstract Page Full-Text 16 - Performance Optimization of an Electrostatically Doped Staggered Type Heterojunction Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate Mahdi Mohammadkhani Ghiasvand Zahra Ahangari Hamed Nematian 10.30495/jopn.2022.29617.1249 Open Access Article Abstract Page Full-Text 17 - Effects of the Channel Length on the Nanoscale Field Effect Diode Performance arash rezaei Bahram Azizollah-Ganji Morteza Gholipour Open Access Article Abstract Page Full-Text 18 - Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor Zahra Ahangari Open Access Article Abstract Page Full-Text 19 - Controlling Ambipolar Current in a Junctionless Tunneling FET Emphasizing on Depletion Region Extension Morteza Rahimian 10.30495/jopn.2023.31255.1274 Open Access Article Abstract Page Full-Text 20 - Voltage Difference Technique in Junctionless Tunneling FET for Suppression of Ambipolar Conduction Morteza Rahimian 10.30495/jopn.2023.32088.1294
