An innovative method for estimating optimal Gate work function and dielectric constant of a nanoscale DG-TFET based on analytical modeling of tunneling length in ambipolar, Off and ON states
Subject Areas : Journal of Nanoanalysis
Fayzollah
Khorramrouz
1
(Department of Electrical Engineering, Rasht Branch, Islamic Azad University, Rasht, Iran)
Seyed Ali
Sedigh Ziabari
2
(Department of Electrical Engineering, Rasht Branch, Islamic Azad University, Rasht, Iran)
Ali
Heydari
3
(2 Smartec B. V. The Netherland, Electronic Instrumentation Laboratory, Delft University of Technology, the
Netherlands
3 Department of Electrical Engineering, Guilan University, Rasht, Iran.)
Keywords:
Abstract :
