An innovative method for estimating optimal Gate work function and dielectric constant of a nanoscale DG-TFET based on analytical modeling of tunneling length in ambipolar, Off and ON states
الموضوعات : Journal of Nanoanalysis
Fayzollah Khorramrouz
1
(Department of Electrical Engineering, Rasht Branch, Islamic Azad University, Rasht, Iran)
Seyed Ali Sedigh Ziabari
2
(Department of Electrical Engineering, Rasht Branch, Islamic Azad University, Rasht, Iran)
Ali Heydari
3
(2 Smartec B. V. The Netherland, Electronic Instrumentation Laboratory, Delft University of Technology, the
Netherlands
3 Department of Electrical Engineering, Guilan University, Rasht, Iran.)
الکلمات المفتاحية: 2D Analytical model, Surface potential, BTBT, minimum tunneling length, DG-TFET,
ملخص المقالة :
In this paper, we propose an innovative and low computational cost approachthat can be used to find optimal values of parameters of a nanoscale dual gatetunneling field-effect transistor (DG-TFET). In this way, after obtaining analyticalexpressions for potential and energy bands of the device using the Poissonequation, the tunneling length is extracted at source-channel and channel-draintunnel junctions in the AMBIPOLAR, Off and On states. Due to the tunnelinglength equation, the different values of gate work function and dielectric constantof the device are swept to determine the minimum and maximum designlimits. According to the above range, the necessary checks are made to reachthe local optimal behaviors. These optimum points are explained based on theachievement of optimal device performance. The accuracy and consistency ofthe proposed model are validated with the TCAD simulation results. The presentmodel can be a handful for the study of TFET performance.
