An innovative method for estimating optimal Gate work function and dielectric constant of a nanoscale DG-TFET based on analytical modeling of tunneling length in ambipolar, Off and ON states
Ali Heydari
1
(
Department of Electrical Engineering, Guilan University, Rasht, Iran.
)
Seyed Ali Sedigh Ziabari
2
(
Department of Electrical Engineering, Rasht Branch, Islamic Azad University, Rasht, Iran
)
Fayzollah Khorramrouz
3
(
Department of Electrical Engineering, Rasht Branch, Islamic Azad University, Rasht, Iran
)
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Abstract :
