An innovative method for estimating optimal Gate work function and dielectric constant of a nanoscale DG-TFET based on analytical modeling of tunneling length in ambipolar Off and ON states

Subject Areas : Journal of Nanoanalysis

Fayzollah Khorramrouz ¹ , Seyed Ali Sedigh Ziabari ² , Ali Heydari ³

1 - Department of Electrical Engineering, Rasht Branch, Islamic Azad University, Rasht, Iran
2 - Department of Electrical Engineering, Rasht Branch, Islamic Azad University, Rasht, Iran
3 - 3 Smartec B. V. The Netherland, Electronic Instrumentation Laboratory, Delft University of Technology, the Netherlands 4 Department of Electrical Engineering, Guilan University, Rasht, Iran.

Received: 2021-09-26 Accepted : 2021-09-26 Published : 2021-06-01

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