This article presents a common low-noise CMOS gate amplifier with active induction load. For large amounts of inductance, a passive inductor on the chip requires a significant area of the chip and its quality factor is limited. A situation that can be considered impract
More
This article presents a common low-noise CMOS gate amplifier with active induction load. For large amounts of inductance, a passive inductor on the chip requires a significant area of the chip and its quality factor is limited. A situation that can be considered impractical. Therefore, the purpose of this work is to search for the possibility of using active inductors in RF circuits as a substitute for their inactive counterpart. In addition, this active inducer is programmable. It is possible to design an amplifier with a programmable central frequency. It is also shown that with proper and optimal design, the contribution of active inductor noise can be minimized. HSPICE simulation using 0.35 µm technology showed that our amplifier has a half-decade tuning range for 1GHz. The gain, noise number and power consumption of the simulated are 20dB, 3.65dB, 14mw, respectively.
Manuscript profile
