Production of metal-insulation-semiconductor MOS bond by electrochemical metallurgy method has been reported. To do the work, first a nickel-chromium wire was placed in a suitable electrolyte medium and by applying voltage, thin layers of aluminum and zinc metal were pl
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Production of metal-insulation-semiconductor MOS bond by electrochemical metallurgy method has been reported. To do the work, first a nickel-chromium wire was placed in a suitable electrolyte medium and by applying voltage, thin layers of aluminum and zinc metal were placed on its surface, respectively. In the next step, the resulting layers were oxidized in air at 400 ° C to form aluminum oxide layers as insulation and zinc oxide as semiconductors. By examining the Arrhenius curve while confirming that the oxide layer is semiconductor, the distance between the impure energy levels and its conductivity level was 0.18 volts. Also, by examining the C-V curve in the resulting MOS capacitor, while confirming the formation of metal-insulation-semiconductor bond, its threshold voltage was about 2.75 volts. This activity, especially the placement of layers of different materials can be offered as a new method.
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