در این مقاله ، یک دیود تونل زنی تشدید با
ساختار سد مضاعف AlAs / GaAs با استفاده از عملکرد سبز غیر تعادلی شبیه سازی شده است. یک
لایه جذب InGaAs منطبق شده برای تشخیص نور در طول موج λ = 600
نانومتر به دستگاه اضافه می شود . میدان الکتریکی از طریق دستگاه و مشخصات نمودار باند انرژی ارائه شده است.
جریان عکس دستگاه و منحنی های جریان جریان منبع در مقابل شدت نور
مقایسه می شوند . در دمای اتاق ، بازده کوانتومی 95/0 برای
دستگاه بدست آمد . پاسخ زمان گذرا دستگاه به دست آمد و وابستگی آن به
پارامترهای ساختاری (ضخامت لایه جذب ، ضخامت کلکتور و انتشار دهنده و
دوپینگ مخاطبین) ، شدت نور ، زاویه نور ساطع شده و سوگیری ولتاژ
شبیه سازی شده و تأثیر آنها بر عملکرد دستگاه مورد تجزیه و تحلیل قرار گرفت. پهنای باند
دستگاه به دست آمد. نتایج شبیه سازی نشان می دهد که وقتی بایاس ولتاژ افزایش یابد ،
زمان افتادن کاهش می یابد و پاسخ دستگاه سریعتر است. با تغییر ضخامت
لایه جذب و مخاطب ، پاسخ زمان RTD-PD تغییر می کند. تغییرات
دوپینگ در لایه های تماس بر روی پهنای باند تأثیر می گذارد. نتیجه نشان می دهد که تغییرات
شدت نور و زاویه نور ساطع شده ، پاسخ زمان گذرا را تغییر می دهند. تفاصيل المقالة

Abstract: Perovskite solar cells have become an attractive subject in the solar energy
device area. During ten years of development, the energy conversion efficiency has been
improved from 2.2% to more than 22%, and it still has a very good potential for further
enhancement. In this paper, a numerical model of the perovskite solar cell with the
structure of glass/ FTO/ TiO2/ H3NH3PbI3/ HTM/Au by using Silvaco Atlas software is
presented. The effect of hole transport material characteristics, including hole mobility
and band gap offset of organic and inorganic HTM layers such as Spiro-MOeTAD, CuO
and Cu2O on the performance of PSCs are investigated. The simulation results reveal that
with increase of hole mobility in hole transport layer, the cell efficiency is increases.
Meanwhile, the solar cell exhibits a better performance by using inorganic materials like
CuO and Cu2O as hole transport layer, than by using Spiro-MOeTAD, particularly the
efficiency reaches 22.12% when Cu2O is used. تفاصيل المقالة

Abstract: In this study, the effects of variation of thickness and the number of quantum
wells as well as the contact length were investigated. In this paper, a vertical cavity surface
emitting laser was simulated using of software based on finite element method. The
number of quantum wells was changed from 3 to 9 and the results which are related to
output power, resonance wavelength and threshold current were extracted. Output
specifications in terms of quantum wells thicknesses of 3.5nm to 9.5nm were evaluated.
Contact thickness is also changed from 0.5μm to 3μm. Results showed that as the number
of quantum wells increased, the resonance wavelength also increased and photon energy
decreased. By reducing the thickness of the quantum well, the threshold current and
radiation wavelength were also decreased. By increasing the contact length, threshold
current and output power increased. Temperature inside the network and density of
photon were increased as the contact length increased تفاصيل المقالة

In this paper, the effect of strain on the efficiency of GaAs solar cell is
investigated. It has been shown that the applied strain during the synthesizing of carbon
nanotubes (CNTs) leads to changing some of its physical properties. This means that strains
can cause numerous changes in the structures. By using a strained layer of the carbon
nanotubes on the GaAs solar cell, the effect of this layer on the performance of the GaAs
solar cell is evaluated. This CNT layer can be used for several purposes. The first is to
create a transparent electrical conductor at the cell surface to increase the output current.
This purpose is one of the most important applications of this layer. But the second and
more important goal is to capture more photons and reduce the emission or reflection of
light emitted onto the cell surface. It is found that the mentioned goals cannot be satisfied
simultaneously. Accordingly, to solve this problem, two different layers were used to
achieve the ideal conditions. It has been shown that the use of a 10% uniaxial strained CNT
layer leads to increase the photon absorption rate onto a non-strained CNT layer for
electrical purposes. The efficiency of the single-junction GaAs solar cell with the above
conditions reaches about 31% which is about 2% higher than the model without strain. تفاصيل المقالة

Abstract:
The present study proposes a novel indium gallium phosphide/aluminum gallium indium phosphide (InGaP/InAlGaP) double junction solar cell without an anti-reflection coating that includes an upper InGaP cell, a lower InAlGaP cell, and a gallium arsenide (GaAs) tunnel junction. To increase the efficiency of the cell, a new window layer was used at the upper junction. To achieve higher efficiency, the researchers also optimized the back surface field layer of the lower cell. The results were analyzed via numerical modeling with Silvaco/Atlas software under the AM1.5 radiation spectrum. Findings suggested that using the sun=1 parameter, the obtained maximum values of short-circuit current, open-circuit voltage, fill factor, and efficiency parameters for the proposed solar cell structure were Jsc = 24.078 mA/cm2, Voc = 3.41886, FF = 91.1836, and Eff = 71.721%, respectively.  تفاصيل المقالة