Time Response of a Resonant Tunneling Diode Based Photo- Detector (RTD-PD)
الموضوعات : فصلنامه نانوساختارهای اپتوالکترونیکی
Mohamad Ahmadzadeh
1
(Department of Electrical Engineering, Rasht Branch, Islamic Azad University, Rasht, Iran)
Abbas Ghadimi
2
(Department of Electrical Engineering, Lahijan Branch, Islamic Azad University, Lahijan, Iran)
Seyed Ali Sedigh Ziabari
3
(Department of Electrical Engineering, Rasht Branch,
Islamic Azad University, Rasht, Iran)
الکلمات المفتاحية: Quantum well, Absorption Layer, Time Response, Non-Equilibrium Green’s Function (NEGF),
ملخص المقالة :
در این مقاله ، یک دیود تونل زنی تشدید با
ساختار سد مضاعف AlAs / GaAs با استفاده از عملکرد سبز غیر تعادلی شبیه سازی شده است. یک
لایه جذب InGaAs منطبق شده برای تشخیص نور در طول موج λ = 600
نانومتر به دستگاه اضافه می شود . میدان الکتریکی از طریق دستگاه و مشخصات نمودار باند انرژی ارائه شده است.
جریان عکس دستگاه و منحنی های جریان جریان منبع در مقابل شدت نور
مقایسه می شوند . در دمای اتاق ، بازده کوانتومی 95/0 برای
دستگاه بدست آمد . پاسخ زمان گذرا دستگاه به دست آمد و وابستگی آن به
پارامترهای ساختاری (ضخامت لایه جذب ، ضخامت کلکتور و انتشار دهنده و
دوپینگ مخاطبین) ، شدت نور ، زاویه نور ساطع شده و سوگیری ولتاژ
شبیه سازی شده و تأثیر آنها بر عملکرد دستگاه مورد تجزیه و تحلیل قرار گرفت. پهنای باند
دستگاه به دست آمد. نتایج شبیه سازی نشان می دهد که وقتی بایاس ولتاژ افزایش یابد ،
زمان افتادن کاهش می یابد و پاسخ دستگاه سریعتر است. با تغییر ضخامت
لایه جذب و مخاطب ، پاسخ زمان RTD-PD تغییر می کند. تغییرات
دوپینگ در لایه های تماس بر روی پهنای باند تأثیر می گذارد. نتیجه نشان می دهد که تغییرات
شدت نور و زاویه نور ساطع شده ، پاسخ زمان گذرا را تغییر می دهند.
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