فهرست مقالات BTBT

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  1 - An innovative method for estimating optimal Gate work function and dielectric constant of a nanoscale DG-TFET based on analytical modeling of tunneling length in ambipolar, Off and ON states
  Ali Heydari Seyed Ali Sedigh Ziabari Fayzollah Khorramrouz
  10.22034/jna.2020.1881749.1166
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  2 - An innovative method for estimating optimal Gate work function and dielectric constant of a nanoscale DG-TFET based on analytical modeling of tunneling length in ambipolar Off and ON states
  Fayzollah Khorramrouz Seyed Ali Sedigh Ziabari Ali Heydari
  10.22034/jna.2021.685452
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  3 - An innovative method for estimating optimal Gate work function and dielectric constant of a nanoscale DG-TFET based on analytical modeling of tunneling length in ambipolar, Off and ON states
  Fayzollah Khorramrouz Seyed Ali Sedigh Ziabari Ali Heydari
  10.22034/jna.2020.680049
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  4 - Effects of the Channel Length on the Nanoscale Field Effect Diode Performance
  arash rezaei Bahram Azizollah-Ganji Morteza Gholipour
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  5 - Controlling Ambipolar Current in a Junctionless Tunneling FET Emphasizing on Depletion Region Extension
  Morteza Rahimian
  10.30495/jopn.2023.31255.1274
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  6 - Voltage Difference Technique in Junctionless Tunneling FET for Suppression of Ambipolar Conduction
  Morteza Rahimian
  10.30495/jopn.2023.32088.1294