This work is a study of the elastic fields’ effect (stresses and displacements) caused by dislocations networks at a heterostructure interface of a InAs / GaAs semiconductors thin system in the cases of isotropic and anisotropic elasticity. The numerical study of this type of heterostructure aims to predict the behavior of the interface with respect to these elastic fields satisfying the boundary conditions. The method used is based on a development in Fourier series. The deformation near the dislocation is greater than the other locations far from the dislocation. پرونده مقاله

This work aims to determine the effect of stresses caused by dislocation networks placed at the interface of a semiconductor heterostructure of the thin GaAs / Si system. In this case, we use a mathematical modeling by Fourier series expansion to numerically simulate the stresses for the two cases of isotropic and anisotropic elasticity in order to predict the mechanical behavior of the heterostructure in the presence of interfacial dislocations while respecting well-defined stress boundary conditions. After establishing the hypotheses of the chosen model, which is a thin bimetallic strip, representing the GaAs / Si semiconductor heterostructure, and the boundary conditions relating to the problem posed, we obtained results of the stress distribution around a dislocation showing that the deformation is greater near the core of the dislocation. The elastic stress relaxation is reached for a layer thickness threshold of the GaAs deposit on the Si substrate not exceeding 5 nm. پرونده مقاله

The elasticity mixed boundary values problems dealing with half-space contact are generally well resolved. A large number of these solutions are obtained by using the integral transformation method and methods based the integral equations. However, the problems of finite layer thicknesses are less investigated, despite their practical interests. This study resolves a quasi-stationary problem of an isotropic elastic layer compressed by two rigid cylinders with flat ends. Hankel transformation and auxiliary functions with boundary conditions reduce the differential equation to an algebraic equations system, which can be solved in a numerical way. The contact efforts equations are established. From the general method, solutions of particular cases are also resolved. A particular case is studied, the contact zone pressure and stresses distribution curves are presented. پرونده مقاله