Modeling at the nanometric scale of interfacial defects of a semiconductor heterostructure in the isotropic and anisotropic cases for the study of the influence of stresses.
محورهای موضوعی : Mechanics of Solids
A Boussaha
1
(Laboratory LAMSM, Mechanical Engineering Department, Faculty of Technology, University of Batna 2 Mostafa Ben Boulaid, Batna, Algeria)
Rafik Makhloufi
2
(Mechanical Engineering Department, University of Batna2, Algeria)
R Benbouta
3
(Department of Mechanical Engineering, Faculty of Technology, University of Batna2, Algeria)
Mourad BRIOUA
4
(Faculty of Technology, University of Batna 2, Algeria)
کلید واژه: Interface, GaAs/Si, Isotropic elasticity, Anisotropic elasticity, Elastic fields,
چکیده مقاله :
This work aims to determine the effect of stresses caused by dislocation networks placed at the interface of a semiconductor heterostructure of the thin GaAs / Si system. In this case, we use a mathematical modeling by Fourier series expansion to numerically simulate the stresses for the two cases of isotropic and anisotropic elasticity in order to predict the mechanical behavior of the heterostructure in the presence of interfacial dislocations while respecting well-defined stress boundary conditions. After establishing the hypotheses of the chosen model, which is a thin bimetallic strip, representing the GaAs / Si semiconductor heterostructure, and the boundary conditions relating to the problem posed, we obtained results of the stress distribution around a dislocation showing that the deformation is greater near the core of the dislocation. The elastic stress relaxation is reached for a layer thickness threshold of the GaAs deposit on the Si substrate not exceeding 5 nm.
This work aims to determine the effect of stresses caused by dislocation networks placed at the interface of a semiconductor heterostructure of the thin GaAs / Si system. In this case, we use a mathematical modeling by Fourier series expansion to numerically simulate the stresses for the two cases of isotropic and anisotropic elasticity in order to predict the mechanical behavior of the heterostructure in the presence of interfacial dislocations while respecting well-defined stress boundary conditions. After establishing the hypotheses of the chosen model, which is a thin bimetallic strip, representing the GaAs / Si semiconductor heterostructure, and the boundary conditions relating to the problem posed, we obtained results of the stress distribution around a dislocation showing that the deformation is greater near the core of the dislocation. The elastic stress relaxation is reached for a layer thickness threshold of the GaAs deposit on the Si substrate not exceeding 5 nm.
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