In this paper, the electrical performance of double gate organic field effect transistor (DG-OFET) are thoroughly investigated and feasibility of the device as an efficient biosensor is comprehensively assessed. The introduced device provides better gate control over the channel, yielding better charge injection properties from source to channel and providing higher on-state current in comparison with single gate devices. The susceptibility of fundamental electrical parameters with respect to the variation of design parameters is thoroughly calculated. In particular, standard deviation and average value of main electrical parameters signify that metal gate workfunction, channel thickness and gate oxide thickness are fundamental design measures that may modify the device efficiency. The insensitivity of off-state current to the change of channel length and drain bias confirms feasibility of the device in nanoscale regime. Next, a nano cavity is embedded in the gate insulator region for accumulation of biomolecules. The immobilization of molecules with different dielectric constants in the gate insulator hollow alters the gate capacitance and results in the drain current deviation with respect to the air- filled cavity condition. It is shown that by the occupancy of whole volume of the nanogap, a maximum range of on-state current variation can be achieved. Manuscript profile

In this paper, a novel junctionless fin field effect transistor (FinFET) with asymmetric doping profile along the device from source to drain (ADJFinFET) is introduced and the electrical characteristics of the device are comprehensively assessed. Unlike the conventional junctionless FinFET, ADJFinFET has lower channel doping density with respect to the adjacent source and drain regions, which provides superior electrical performance in nanoscale regime. Impact of device geometry and physical design parameters on the device performance are thoroughly investigated via calculating standard deviation over mean value of main electrical measures. The sensitivity analysis reveals that metal gate workfunction, doping density and fin width are critical design parameters that may fundamentally modify the device performance. Furthermore, 2D variation matrix of gate workfunction and channel doping density are calculated for optimizing the device performance in terms of off-state and on-state current. The results demonstrate that the proposed device establishes a promising candidate to realize the requirements of low-power high-performance integrated circuits. Manuscript profile

In this paper, a novel device, namely heterojunction electron-hole bilayer tunnel field effect transistor (HJ-EHBTFET), is proposed which outperforms conventional tunnel field effect transistor (TFET) in terms of electrical performance. The use of lattice matched InAs/Al0.6Ga0.4Sb material combination results in a broken band gap configuration, making it highly suitable for high speed ultra-low applications, as it requires smaller gate bias for the onset of tunneling. The impact of critical design parameters on the device performance is comprehensively investigated. The proposed device utilizes electrical doping instead of physical doping for the creation of tunneling junction, which effectively addresses the problem of low solubility of dopants in heavily doped III-V materials. The top gate and bottom gate workfunction are critical design parameters that effectively modulated the electrically induced charges at the tunneling junction and consequently, affect the tunneling rate. In order to obtain the lowest possible transition voltage for the onset of tunneling, a variation matrix of threshold voltage variation is computed as a function of gate electrode workfunction. Through this process, a step-like behavior from off-state to on-state has been achieved, with a subthreshold swing of 3 mV/dec and on/off current ratio of 5.8×1012, thereby paving the way for the design of low-power high-speed digital computing systems. Manuscript profile