In this paper, a novel junctionless fin field effect transistor (FinFET) with asymmetric doping profile along the device from source to drain (ADJFinFET) is introduced and the electrical characteristics of the device are comprehensively assessed. Unlike the conventional junctionless FinFET, ADJFinFET has lower channel doping density with respect to the adjacent source and drain regions, which provides superior electrical performance in nanoscale regime. Impact of device geometry and physical design parameters on the device performance are thoroughly investigated via calculating standard deviation over mean value of main electrical measures. The sensitivity analysis reveals that metal gate workfunction, doping density and fin width are critical design parameters that may fundamentally modify the device performance. Furthermore, 2D variation matrix of gate workfunction and channel doping density are calculated for optimizing the device performance in terms of off-state and on-state current. The results demonstrate that the proposed device establishes a promising candidate to realize the requirements of low-power high-performance integrated circuits. Manuscript profile

In this paper, a novel junctionless fin field effect transistor (FinFET) withasymmetric doping profile along with the device from source to drain (ADJFinFET)is introduced and the electrical characteristics of the device are comprehensivelyassessed. Unlike the conventional junctionless FinFET, ADJFinFET has lowerchannel doping density with respect to the adjacent source and drain regions,which provides superior electrical performance in nanoscale regime. The impactof device geometry and physical design parameters on the device performanceare thoroughly investigated via calculating standard deviation over mean valueof main electrical measures. The sensitivity analysis reveals that metal gateworkfunction, doping density and fin width are critical design parameters thatmay fundamentally modify the device performance. Furthermore, 2D variationmatrix of gate workfunction and channel doping density is calculated foroptimizing the device performance in terms of off-state and on-state current. Theresults demonstrate that the proposed device establishes a promising candidateto realize the requirements of low-power high-performance integrated circuits. Manuscript profile