In this paper, the electrical performance of double gate organic field effecttransistor (DG-OFET) are thoroughly investigated and feasibility of the deviceas an efficient biosensor is comprehensively assessed. The introduced deviceprovides better gate control over the channel, yielding better charge injectionproperties from source to channel and providing higher on-state current incomparison with single gate devices. The susceptibility of fundamental electricalparameters with respect to the variation of design parameters is thoroughlycalculated. In particular, standard deviation and average value of main electricalparameters signify that metal gate work function, channel thickness and gateoxide thickness are fundamental design measures that may modify the deviceefficiency. The insensitivity of off-state current to the change of channel lengthand drain bias confirms feasibility of the device in the nanoscale regime. Next,a nano cavity is embedded in the gate insulator region for accumulation ofbiomolecules. The immobilization of molecules with different dielectric constantsin the gate insulator hollow alters the gate capacitance and results in the draincurrent deviation with respect to the air- filled cavity condition. It is shown thatby the occupancy of the whole volume of the nanogap, a maximum range of onstatecurrent variation can be achieved. Manuscript profile

In this paper, a novel junctionless fin field effect transistor (FinFET) withasymmetric doping profile along with the device from source to drain (ADJFinFET)is introduced and the electrical characteristics of the device are comprehensivelyassessed. Unlike the conventional junctionless FinFET, ADJFinFET has lowerchannel doping density with respect to the adjacent source and drain regions,which provides superior electrical performance in nanoscale regime. The impactof device geometry and physical design parameters on the device performanceare thoroughly investigated via calculating standard deviation over mean valueof main electrical measures. The sensitivity analysis reveals that metal gateworkfunction, doping density and fin width are critical design parameters thatmay fundamentally modify the device performance. Furthermore, 2D variationmatrix of gate workfunction and channel doping density is calculated foroptimizing the device performance in terms of off-state and on-state current. Theresults demonstrate that the proposed device establishes a promising candidateto realize the requirements of low-power high-performance integrated circuits. Manuscript profile