This work is a study of the elastic fields’ effect (stresses and displacements) caused by dislocations networks at a heterostructure interface of a InAs / GaAs semiconductors thin system in the cases of isotropic and anisotropic elasticity. The numerical study of More
This work is a study of the elastic fields’ effect (stresses and displacements) caused by dislocations networks at a heterostructure interface of a InAs / GaAs semiconductors thin system in the cases of isotropic and anisotropic elasticity. The numerical study of this type of heterostructure aims to predict the behavior of the interface with respect to these elastic fields satisfying the boundary conditions. The method used is based on a development in Fourier series. The deformation near the dislocation is greater than the other locations far from the dislocation.
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The elasticity mixed boundary values problems dealing with half-space contact are generally well resolved. A large number of these solutions are obtained by using the integral transformation method and methods based the integral equations. However, the problems of finit More
The elasticity mixed boundary values problems dealing with half-space contact are generally well resolved. A large number of these solutions are obtained by using the integral transformation method and methods based the integral equations. However, the problems of finite layer thicknesses are less investigated, despite their practical interests. This study resolves a quasi-stationary problem of an isotropic elastic layer compressed by two rigid cylinders with flat ends. Hankel transformation and auxiliary functions with boundary conditions reduce the differential equation to an algebraic equations system, which can be solved in a numerical way. The contact efforts equations are established. From the general method, solutions of particular cases are also resolved. A particular case is studied, the contact zone pressure and stresses distribution curves are presented.
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