Anisotropic and Isotropic Elasticity Applied for the Study of Elastic Fields Generated by Interfacial Dislocations in a Heterostructure of InAs/(001)GaAs Semiconductors

Subject Areas : Mechanical Engineering

R Makhloufi ¹ (Mechanical Engineering Department, Faculty of Technology, LICEGS Laboratory, University of Batna 2 Mostafa Ben Boulaid, Batna, Algeria)
A Boussaha ² (Mechanical Engineering Department, Faculty of Technology, University of Batna 2 Mostafa Ben Boulaid, Batna, Algeria)
R Benbouta ³ (Mechanical Engineering Department, Faculty of Technology, LICEGS Laboratory, University of Batna 2 Mostafa Ben Boulaid, Batna, Algeria)
L Baroura ⁴ (Mechanical Engineering Department, University of Constantine 1, Algeria)

Received: 2021-08-01 Accepted : 2021-10-09 Published : 2021-12-30

Keywords: semiconductors, Elastic fields, Isotropic, Anisotropic, InAs/GaAs,

Abstract :

This work is a study of the elastic fields’ effect (stresses and displacements) caused by dislocations networks at a heterostructure interface of a InAs / GaAs semiconductors thin system in the cases of isotropic and anisotropic elasticity. The numerical study of this type of heterostructure aims to predict the behavior of the interface with respect to these elastic fields satisfying the boundary conditions. The method used is based on a development in Fourier series. The deformation near the dislocation is greater than the other locations far from the dislocation.

References:

[1] Makhloufi R., Brioua M., Benbouta R., 2016, The effect of the elastic fields caused by a networks of dislocations placed at interfaces of a three-layer material Cu/Cu/(001) Fe in the case of anisotropic elasticity, Arabian Journal for Science and Engineering 41(5): 1955-1960.
[2] Boussaha A., Makhloufi R., Madani S., 2019, Displacement fields influence analysis caused by dislocation networks at a three layer system interfaces on the surface topology, Journal of Solid Mechanics 11(3): 606-614.
[3] Belk J.G., McConville C.F., Sudijono J.L., Jones T.S., Joyce B.A., 1997, Surface alloying at InAs/GaAs interfaces grown on (001) surfaces by molecular beam epitaxy, Surface Science 387(1-3): 213-226.
[4] Youssef S.B., Fnaiech M., Chen F.R., Loubradou M., Bonnet R., 1999, Electron microscopy of nanoledges at the (001) InAs/(001) GaAs interface for an approximate orientation relationship, Physica Status Solidi (a) 174(2): 403-411.
[5] Yonemoto K., Akiyama T., Pradipto A.M., Nakamura K., Ito T., 2020, Ab initio study for adsorption-desorption behavior on InAs wetting layer surface grown on GaAs (001) substrate, Journal of Crystal Growth 532: 125369.
[6] Nakajima K., 1994, Calculation of stresses in strained semiconductor layers, Materials Research Society Symposium Proceedings 338: 149-160.
[7] Derardja A., Adami L., Youssef S., Bonnet R., 2004, Anisotropie de la relaxation elastique d’un reseau biperiodique de dislocations enterrées: theorie et application aux bicristaux de semi-conducteurs, European Journal of Control 29(4):123-132.
[8] Ohtake A., Mano T., Sakuma Y., 2020, Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates, Scientific Reports 10(1): 1-7.
[9] Leonard D., Pond K., Petroff P.M., 1994, Critical layer thickness for self-assembled InAs islands on GaAs, Physical Review B 50(16): 11687.
[10] Zribi J., 2014, Croissance et Caractérisation des Boîtes Quantiques InAs/GaAs Pour des Applications Photovoltaïques, Thèse Présentée au Département de Physique en vue de l’Obtention du Grade de Docteur ès Sciences, Université de Sherbrooke.
[11] Eiwwongcharoen W., Nakareseisoon N., Thainoi S., Panyakeow S., Kanjanachuchai S., 2016, Ultrathin epitaxial InAs layer relaxation on cross-hatch stress fields, CrystEngComm 18(31): 5852-5859.
[12] Bonnet R., 1981, Periodic displacement and stress fields near a phase boundary in the isotropic elasticity theory, Philosophical Magazine A 43: 1165 -1187.
[13] Eshelby J.D., Read W.T., Shockley W., 1953, Anisotropic elasticity with applications to dislocation theory, Acta Materialia 1: 251-259.
[14] Bonnet R., 1981, Periodic displacement and stress fields near a phase boundary in the isotropic elasticity theory, Philosophical Magazine A 43(5): 1165-1187.
[15] Bonnet R., Verger-Gaugry J.L., 1992, Couche épitaxique mince sur un substrat semi-infini: rôle du désaccord paramétrique et de l‘épaisseur sur les distortions élastiques, Philosophical Magazine A 66(5): 849-871.
[16] Bonnet R., Morton A.J., 1987, Contraste en M.E.T. I deux ondes d’une dislocation rectiligne parallèle à la surface libre d’un cristal anisotrope, Philosophical Magazine A 56: 815-830.
[17] Nye J. F., 1969, Physical Properties of Crystals, Clarendon Press (Oxford).
[18] Chami A.C., 1988, Contraintes et Relaxation des Couches de Semi-Conducteurs, Etude Par Canalisation, Thèse de Doctorat, Université d’Alger.