فهرست مقالات Surface potential

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  1 - The effects of applying different bias voltages and phase differences on performance of an asymmetric surface dielectric barrier discharge; an experimental investigation
  H. Mahdavi F. Sohbatzadeh
  10.1007/s40094-019-0334-3
  AbstractIn the present research, the performance of the electrohydrodynamic force in an asymmetric surface dielectric barrier discharge actuator has been investigated at different bias voltages. The effects of DC, AC plus DC (DC-offset), and sinusoidal bias voltages on چکیده کامل

  AbstractIn the present research, the performance of the electrohydrodynamic force in an asymmetric surface dielectric barrier discharge actuator has been investigated at different bias voltages. The effects of DC, AC plus DC (DC-offset), and sinusoidal bias voltages on the force generation have been studied through measuring the electric wind velocity profiles, surface potential, and electric field. The results showed that applying DC and DC-offset biases to the lower electrode instead of connecting it to the ground in a typical case increased the charge deposition on the dielectric surface and consequently reduced the electrohydrodynamic force generation. This effect was also observed in case of exchanging these voltages with AC sinusoidal voltage of the upper electrode. In addition, as a new idea, two-phase shifted AC voltage was applied to the electrodes and the resulting changes have been studied. The obtained results at 180∘documentclass[12pt]{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} egin{document}$$180^{^circ }$$end{document} phase difference were very noticeable and showed 46% improvement in the maximum velocity of the induced flow relative to the grounded electrode with the same input power. Using this technique, a certain wind velocity can be obtained at relatively lower voltages and input powers compared to the conventional case of grounding the lower electrode. Such a capability is significant in aerodynamic applications, where applying large values of the high voltages may disturb the operational systems. پرونده مقاله
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  2 - An innovative method for estimating optimal Gate work function and dielectric constant of a nanoscale DG-TFET based on analytical modeling of tunneling length in ambipolar, Off and ON states
  Ali Heydari Seyed Ali Sedigh Ziabari Fayzollah Khorramrouz
  10.22034/jna.2020.1881749.1166
  In this paper, we propose an innovative and low computational cost approach that can be used to find optimal values of parameters of a nanoscale dual gate tunneling field-effect transistor (DG-TFET). In this way, after obtaining analytical expressions for potential and چکیده کامل

  In this paper, we propose an innovative and low computational cost approach that can be used to find optimal values of parameters of a nanoscale dual gate tunneling field-effect transistor (DG-TFET). In this way, after obtaining analytical expressions for potential and energy bands of the device using the Poisson equation, the tunneling length is extracted at source-channel and channel-drain tunnel junctions in the AMBIPOLAR, Off and On states. Due to the tunneling length equation, the different values of gate work function and dielectric constant of the device are swept to determine the minimum and maximum design limits. According to the above range, the necessary checks are made to reach the local optimal behaviors. These optimum points are explained based on the achievement of optimal device performance. The accuracy and consistency of the proposed model is validated with the TCAD simulation results. The present model can be a handful for the study of TFET performance. پرونده مقاله
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  3 - An innovative method for estimating optimal Gate work function and dielectric constant of a nanoscale DG-TFET based on analytical modeling of tunneling length in ambipolar Off and ON states
  Fayzollah Khorramrouz Seyed Ali Sedigh Ziabari Ali Heydari
  10.22034/jna.2021.685452
  In this paper, we propose an innovative and low computational cost approachthat can be used to find optimal values of parameters of a nanoscale dual-gatea tunneling field-effect transistor (DG-TFET). In this way, after obtaining analyticalexpressions for potential and e چکیده کامل

  In this paper, we propose an innovative and low computational cost approachthat can be used to find optimal values of parameters of a nanoscale dual-gatea tunneling field-effect transistor (DG-TFET). In this way, after obtaining analyticalexpressions for potential and energy bands of the device using the Poissonequation, the tunneling length is extracted at source-channel and channel-draintunnel junctions in the AMBIPOLAR, Off and On states. Due to the tunnelinglength equation, the different values of gate work function and dielectric constantof the device are swept to determine the minimum and maximum designlimits. According to the above range, the necessary checks are made to reachthe local optimal behaviors. These optimum points are explained based on theachievement of optimal device performance. The accuracy and consistency of theproposed model are validated with the TCAD simulation results. The present modelcan be a handful for the study of TFET performance. پرونده مقاله
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  4 - An innovative method for estimating optimal Gate work function and dielectric constant of a nanoscale DG-TFET based on analytical modeling of tunneling length in ambipolar, Off and ON states
  Fayzollah Khorramrouz Seyed Ali Sedigh Ziabari Ali Heydari
  10.22034/jna.2020.680049
  In this paper, we propose an innovative and low computational cost approachthat can be used to find optimal values of parameters of a nanoscale dual gatetunneling field-effect transistor (DG-TFET). In this way, after obtaining analyticalexpressions for potential and ene چکیده کامل

  In this paper, we propose an innovative and low computational cost approachthat can be used to find optimal values of parameters of a nanoscale dual gatetunneling field-effect transistor (DG-TFET). In this way, after obtaining analyticalexpressions for potential and energy bands of the device using the Poissonequation, the tunneling length is extracted at source-channel and channel-draintunnel junctions in the AMBIPOLAR, Off and On states. Due to the tunnelinglength equation, the different values of gate work function and dielectric constantof the device are swept to determine the minimum and maximum designlimits. According to the above range, the necessary checks are made to reachthe local optimal behaviors. These optimum points are explained based on theachievement of optimal device performance. The accuracy and consistency ofthe proposed model are validated with the TCAD simulation results. The presentmodel can be a handful for the study of TFET performance. پرونده مقاله