The present study was conducted to investigate current density of
0.3 0.7 Al Ga N/ GaN multiple quantum well solar cell (MQWSC) under hydrostatic
pressure. The effects of hydrostatic pressure were taken into account to measure
parameters of 0.3 0.7 Al Ga N/ GaN MQWSC, such as interband transition energy, electronhole
wave functions, absorption coefficient, and dielectric constant. Finite-difference
method (FDM) was used to acquire energy eigenvalues and their corresponding
eigenfunctions of 0.3 0.7 Al Ga N/ GaN MQW and hole eigenstates were calculated through
a 66 k.p method under an applied hydrostatic pressure. It was found that the depth of
the quantum wells, bandgaps, band offset, the electron, and hole density increases with
the hydrostatic pressure. Also, as the pressure increases, the electron and hole wave
functions will have less overlap, the amplitude of the absorption coefficient increases,
and the binding energy of the excitons decreases. Our results showed that a change in
the pressure up to 10 GPa caused absorption coefficients҆ peaks of light and heavy holes
to shift to low wavelengths of up to 32 nm, which in turn decreased short-circuit current
density and increased open circuit voltage. Manuscript profile

In this paper, a numerical model is used to analyze an optical absorption coefficient according to the electronic properties of InGaN/GaN multiple-quantum-well solar cells (MQWSC) under hydrostatic pressure. Finite difference techniques have been used to acquire energy eigenvalues and their corresponding eigenfunctions of InGaN/GaN MQWSC and the hole eigenstates are calculated via a 6*6 k.p method under the applied hydrostatic pressure. All symmetry-allowed transitions up to the fifth subband of the quantum wells (multi-subband model) and barrier optical absorption, as well as the linewidth due to the carrier-carrier and carrier-longitudinal optical (LO) phonon scattering, are considered here. A change in the pressure up to 10 GPa increases the intraband scattering time up to 38fs and 40fs for light and heavy holes, respectively, raises the height of the Lorentz function and reduces the excitonic binding energy. The multi-subband model has a positive effect on the optical absorption coefficient and increases it by %17, contrary to the pressure function. Manuscript profile

Abstract:
This study employs a numerical model to analyze the non-radiative Auger current in c-plane InGaN/GaN multiple-quantum-well laser diodes (MQWLD) under hydrostatic pressure and temperature. Finite difference methods (FDMs) were used to acquire energy eigenvalues and their corresponding eigenfunctions of InGaN/GaN MQWLD. In addition, the hole eigenstates were calculated via a 6*6 k.p method under applied hydrostatic pressure and temperature. The calculations demonstrated that the hole-hole-electron (CHHS) and electron-electron-hole (CCCH) Auger coefficients had the largest contribution to the total Auger current (76% and 20%, respectively). Increasing the hydrostatic pressure could increase the amount of the carrier density and the electric field. On the other hand, this increase reduced the overlap integral of wave functions and the localized length of electrons, heavy, light and split of band holes. Also, for the hydrostatic pressure of about 10 GPa and the temperature ‎‎of 300 K, the non-radiative Auger current has an optimum value of 334 A/cm². ‎The results reveal that the elevated hydrostatic pressure and temperature play a positive and negative role in the performance of laser diodes. Manuscript profile