Subject Areas : Journal of Optoelectronical Nanostructures

Rajab yahyazadeh ¹ , zahra hashempour ²

1 - Department of Physics, Khoy branch, Islamic Azad University, Khoy, Iran
2 - Department of Physics, Khoy Branch, Islamic Azad University, Khoy, Iran

Received: 2021-05-03 Accepted : 2021-08-01 Published : 2021-05-01

Keywords:

References:

• Boudaoud, A. Hamdoune, Z. Allam. Simulation and optimization of a tandem solar cell based on InGaN. Mathematics and Computers in Simulation, 167 (2020) 194-201.


• Kuc, L. Piskorski, M. Dems, M. Wasiak, A. K. Sokoł, Robert P. Sarzała, T. Czyszanowski. Numerical Investigation of the Impact of ITO, AlInN, Plasmonic GaN and Top Gold Metalization on Semipolar Green EELs. Materials. 13 (2020) 1444.


• Tian, L. Hu, L. Zhang, J. Liu, H. Yang. Design and growth of GaN-based blue and green laser diodes. Sci China Mate. 63(8) (2020) 1348–1363.


• Pandey, W. J. Shin, J. Gim, R. Hovden, Z. Mi. High-efficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet light-emitting diodes. Photonics Research. 8(3) (2020) 331-337.


• Huang, H. Chen et al. Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers. Appl Phys Lett. 113(4) (2018) 043501.


• G. Bhuiyan, K. Sugita, A. Hashimoto, A. Yamamoto. InGaN solar cells: present state of the art and important challenges. IEEE J Photovolt. 2(3) (2012) 276-293.


• Wu, W. Walukiewicz et al. Small band gap bowing in alloys.  Appl. Phys. Lett. 80 (2002) 4741.


• Yahyazadeh, Effect of hydrostatic Pressure on Optical Absorption Spectrum AlGaN/GaN Multi-quantum wells. Journal of Interfaces, Thin films, and Low dimensional systems. 3(2) (2021) 279-287.


• Yahyazadeh, Z. hashempour. Effects of Hydrostatic Pressure and Temperature on the AlGaN/GaN High Electron Mobility Transistors, Journal of Interfaces. Thin films, and Low dimensional systems. 2(2) (2019) 183-194.


• Z. H. Minabi, A. Keshavarz, A. Gharaati. The effect of temperature on optical absorption cross section of bimetallic core-shell nano particles. Journal of Optoelectronical Nanostructures. 1(3) (2016) 62-75.


• Sefidgar, H. R. Saghai, H. G. K. Azar. Enhancing Efficiency of Twobond Solar Cells Based on GaAs/InGaP. Journal of Optoelectronical Nanostructures. 4(2) (2019) 84-102.


• Deng et al. An investigation on In_xGa_1−xN/GaN multiple quantum well solar cells. J. Phy. D: Appl. Phy. 44 (2011) 265103.


• Belghouthi, M. Aillerie. Temperatur dependece of InGaN/GaN Multiple quantum well solar cell. Energy Procedia. 157 (2019) 793.


• Chouchen, M. H. Gazzah, A. Bajahzar, Hafedh Belmabrouk. Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells. Materials. 12 (2019) 1241.


• Yahyazadeh. Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells. J. of Photonics for Energy. 10 (2020) 045504.


• Huang. Piezo-Phototronic Effect in a Quantum Well Structure. ACS Nano. 10(5) 5145 (2016) 5145.


• Ambacher, A. B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu et al. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures. J. Appl. Phys. 87 (2000) 334.


• Ambacher, J. Majewski, C. Miskys, et al. Pyroelectric properties of Al (In) GaN/GaN hetero- and quantum well structures. J. Phys. Condens. Matter. 14 (2002) 3399.


• J. Feng, Z. J. Cheng, and H. Yue. Temperature dependence of Hall electron density of GaN-based heterostructures. Chinese Physics. 13 (2004) 1334.


• Fiorentini, F. Bernardini, and O. Ambacher. Evidence for nonlinear macroscopic polarization in III–V nitride alloy Heterostructures. Appl. Phys. Lett. 80 (2002) 1204.


• Perlin, L. Mattos, N. A. Shapiro, J. Kruger, W. S. Wong, T. Sands, N. W. Cheung, E. R. Weber. Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate. J. Appl. Phys. 85 (1999) 2385.


• J Bala, A. J Peter, C. W Lee. Simultaneous effects of pressure and temperature on the optical transition energies in a Ga0.7In0.3N/GaN quantum ring. Chemical Physics. 495 (2017) 42.


• Vurgaftman, J. R Meyer, L. R. R Mohan. Band parameters for III–V compound semiconductors and their alloys. J. Appl. Phys. 89 (2001) 5815.


• Jogai. Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors. Journal of Applied Physics. 93 (2003) 1631.


• Jogai. Parasitic Hole Channels in AlGaN/GaN Heterojunction Structures. Phys. stat. sol. (b). 233(3) (2002) 506.


• B. Yekta, H. Kaatuzian. Design considerations to improve high temperature characteristics of 1.3μm AlGaInAs-InP uncooled multiple quantum well lasers: Strain in barriers. Optik. 122 (2011) 514.


• Piprek, Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation, Elsevier Scince, San Diego.California, 2013, 121-129.


• Horri, S. Z. Mirmoeini. Analysis of Kirk Effect in Nanoscale Quantum Well Heterojunction Bipolar Transistor Laser. Journal of Optoelectronical Nanostructures. 5(2) (2020) 25-38


• Cheraghizade. Optoelectronic Properties of PbS Films: Effect of Carrier Gas. Journal of Optoelectronical Nanostructures. 4(2) (2019) 1-12.


• S. Zory, Quantum well lasers, Academic. San Diego. Ca, 1993, 58-150.


• D. Mahan, Many-body particle physics, Plenum press, New York and London, 1990, 109-183.


• Wei-Ying et al. Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells. Chin. Phys. B.  23(11) (2014) 117803.


• yahyazadeh, Z. Hashempour. Numerical Modeling of Electronic and Electrical Characteristics of Multiple Quantum Well Solar Cells Al_0.3Ga_0.7N/GaN. Journal of Optoelectronical Nanostructures. 5(3) (2020) 81.


• H. Ha, S. L. Ban. Binding energies of excitons in a strained wurtzite GaN/AlGaN quantum well influenced by screening and hydrostatic pressure. J. Phys.: Condens. Matter. 20 (2008) 085218.


• G. Rojas-Briseno, I. Rodriguez-Vargas, M. E. Mora-Ramos, J.C. Martínez-Orozco. Heavy and light exciton states in c-AlGaN/GaN asymmetric double quantum wells. Physica E. 124 (2020) 114248.


• Harrison, A. Valavanis, Quantum Wells, Wires and Dots: Theoretical and Computational Physics of Semiconductor Nanostructures, Wiley, 4th ed., 2016, 189-217.


• Kasapoglu, H. Sari, N. Balkan, I. Sokmen, Y. Ergun. Binding energy of excitons in symmetric and asymmetric coupled double quantum wells in a uniform magnetic field. Semicond. Sci. Technol. 15(2) (2000) 219.


• G. Rojas-Briseño, J.C. Martínez-Orozco, M.E. Mora-Ramos. States of direct and indirect excitons in strained zinc-blende GaN/InGaN asymmetric quantum wells. Superlattices and Microstructures. 112 (2017) 574-583.


• R Yahyazadeh, Hashempour. Effect of Hydrostatic Pressure and Temperature on Quantum Confinement of AlGaN/GaN HEMTs. Journal of Science and Technology. 13(1) (2021) 1-11.


• L. Chung, C.S. Chang. k.p method for strained wurtzite semiconductor. Phys. Rev. B. 54 (1996) 2502.


• Adachi, Physical Properties of III-V compounds, John Wiley & Sons, 1992, 290.


• R. Chinn, P. S. Zory, A. R. Reisinger. A Modal for Grin-SCH-SQW Diode Lasers. IEEE Journal of quantum Electronics. 24(11) (1988) 2191.


• Tan, G. L. Snider, L. D. Chang, E. L. Hu. A self-consistent solution of Schrödinger–Poisson equations using a nonuniform mesh. J. Appl. Phys. 68 (1990) 4071.


• Huang et al. Piezo-Phototronic Effect in a Quantum Well Structure. ACS Nano. 10 (2016) 5145.


• Dongmei, W. Zongchi, X. Boqi. Correlated electron–hole transitions in wurtzite GaN quantum dots: the effects of strain and hydrostatic pressure. J. Semicond. 33 (2012) 052002.