Anisotropic and Isotropic Elasticity Applied for the Study of Elastic Fields Generated by Interfacial Dislocations in a Heterostructure of InAs/(001)GaAs Semiconductors

Subject Areas : Mechanical Engineering

R Makhloufi ¹ , A Boussaha ² , R Benbouta ³ , L Baroura ⁴

1 - Mechanical Engineering Department, Faculty of Technology, LICEGS Laboratory, University of Batna 2 Mostafa Ben Boulaid, Batna, Algeria
2 - Mechanical Engineering Department, Faculty of Technology, University of Batna 2 Mostafa Ben Boulaid, Batna, Algeria
3 - Mechanical Engineering Department, Faculty of Technology, LICEGS Laboratory, University of Batna 2 Mostafa Ben Boulaid, Batna, Algeria
4 - Mechanical Engineering Department, University of Constantine 1, Algeria

Received: 2021-08-01 Accepted : 2021-10-09 Published : 2021-12-30

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[1] Makhloufi R., Brioua M., Benbouta R., 2016, The effect of the elastic fields caused by a networks of dislocations placed at interfaces of a three-layer material Cu/Cu/(001) Fe in the case of anisotropic elasticity, Arabian Journal for Science and Engineering 41(5): 1955-1960.
[2] Boussaha A., Makhloufi R., Madani S., 2019, Displacement fields influence analysis caused by dislocation networks at a three layer system interfaces on the surface topology, Journal of Solid Mechanics 11(3): 606-614.
[3] Belk J.G., McConville C.F., Sudijono J.L., Jones T.S., Joyce B.A., 1997, Surface alloying at InAs/GaAs interfaces grown on (001) surfaces by molecular beam epitaxy, Surface Science 387(1-3): 213-226.
[4] Youssef S.B., Fnaiech M., Chen F.R., Loubradou M., Bonnet R., 1999, Electron microscopy of nanoledges at the (001) InAs/(001) GaAs interface for an approximate orientation relationship, Physica Status Solidi (a) 174(2): 403-411.
[5] Yonemoto K., Akiyama T., Pradipto A.M., Nakamura K., Ito T., 2020, Ab initio study for adsorption-desorption behavior on InAs wetting layer surface grown on GaAs (001) substrate, Journal of Crystal Growth 532: 125369.
[6] Nakajima K., 1994, Calculation of stresses in strained semiconductor layers, Materials Research Society Symposium Proceedings 338: 149-160.
[7] Derardja A., Adami L., Youssef S., Bonnet R., 2004, Anisotropie de la relaxation elastique d’un reseau biperiodique de dislocations enterrées: theorie et application aux bicristaux de semi-conducteurs, European Journal of Control 29(4):123-132.
[8] Ohtake A., Mano T., Sakuma Y., 2020, Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates, Scientific Reports 10(1): 1-7.
[9] Leonard D., Pond K., Petroff P.M., 1994, Critical layer thickness for self-assembled InAs islands on GaAs, Physical Review B 50(16): 11687.
[10] Zribi J., 2014, Croissance et Caractérisation des Boîtes Quantiques InAs/GaAs Pour des Applications Photovoltaïques, Thèse Présentée au Département de Physique en vue de l’Obtention du Grade de Docteur ès Sciences, Université de Sherbrooke.
[11] Eiwwongcharoen W., Nakareseisoon N., Thainoi S., Panyakeow S., Kanjanachuchai S., 2016, Ultrathin epitaxial InAs layer relaxation on cross-hatch stress fields, CrystEngComm 18(31): 5852-5859.
[12] Bonnet R., 1981, Periodic displacement and stress fields near a phase boundary in the isotropic elasticity theory, Philosophical Magazine A 43: 1165 -1187.
[13] Eshelby J.D., Read W.T., Shockley W., 1953, Anisotropic elasticity with applications to dislocation theory, Acta Materialia 1: 251-259.
[14] Bonnet R., 1981, Periodic displacement and stress fields near a phase boundary in the isotropic elasticity theory, Philosophical Magazine A 43(5): 1165-1187.
[15] Bonnet R., Verger-Gaugry J.L., 1992, Couche épitaxique mince sur un substrat semi-infini: rôle du désaccord paramétrique et de l‘épaisseur sur les distortions élastiques, Philosophical Magazine A 66(5): 849-871.
[16] Bonnet R., Morton A.J., 1987, Contraste en M.E.T. I deux ondes d’une dislocation rectiligne parallèle à la surface libre d’un cristal anisotrope, Philosophical Magazine A 56: 815-830.
[17] Nye J. F., 1969, Physical Properties of Crystals, Clarendon Press (Oxford).
[18] Chami A.C., 1988, Contraintes et Relaxation des Couches de Semi-Conducteurs, Etude Par Canalisation, Thèse de Doctorat, Université d’Alger.