Subject Areas : Journal of Optoelectronical Nanostructures
Mahdi Zavvari
1
(Department of Electrical Engineering, Urmia branch, Islamic Azad
University, Urmia, Iran)
Yashar Zehforoosh
2
(Department of Electrical Engineering, Urmia branch, Islamic Azad
University, Urmia, Iran)
Keywords:
Abstract :
[1] N. C. W. Choi, G. H. Han, J. Park. D. Akinwande, Y. H. Lee. Recent development of two-dimensional transition metal dichalcogenides and their applications, Materialstoday. (2017) 20, 116-130.
[2] N. S. M. Samadi, M. Zirak, H. Zhang, H.-L. Zhang, A. Z. Moshfegh. Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives. Nanoscale Horizons. (2018) 3, 90-204.
[3] J. Y. S. Ahmed. Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors. Nano-Micro Lett. (2017) 9, 50.
[4] A. H. L. M. Pumera. Layered transition-metal dichalcogenides (MoS2 and WS2) for sensing and biosensing. TrAC Trends in Analytical Chemistry, (2014) 61, 49-53.
[5] C. W. X. Duan, A. Pan, R. Yu, X. Duan. Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges. Chem. Soc. Rev. (2015) 44, 8859-8876.
[6] D. O. S. Manzeli, D. Pasquier, O. V. Yazyev 2D transition metal dichalcogenides. Nature Reviews Materials, (2017) 2, 17033.
[7] E. S. I. V. Baroogh Miandoab, H. Kahrade. The effect of concentration and time of hydrothermal process on the fluorescent property of Molybdenum Diselenide nano-layers. J. Optoelectronical Nanostructures. (2016) 1, 35-42.
[8] M. L. C. M. Amani, A. G. Birdwell, T. O’Regan, S. Najmaei, Z. Liu, M. Ajayan, J. Lou, M. Dubey. Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition. Appl. Phys. Lett. (2013) 102, 193107.
[9] A. R. B. Radisavljevic, J. Brivio, V. Giacometti, A. Kis. Single-layer MoS2 transistors. Nature Nanotechnology. (2011) 6, 147–150.
[10] C.-C. S. H.-L. Liu, S.-H. Su, C.-L. Hsu, M.-Y. Li, L.-J. Li. Optical properties of monolayer transition metal dichalcogenides probed by spectroscopic ellipsometry. Appl. Phys. Lett. (2014) 105, 201905.
[11] K. O. R. Cudazzo, C. J. Sahle, A. Al-Zein, H. Berger, E. Navarro-Moratalla, S. Huotari, M. Gatti, A. Rubio. High-Energy Plasmonic Excitations in 2d Transition-Metal Dichalcogenides Phys. Rev. B. (2014) 90, 125125.
[12] M. B. K. Keyshar, X. Zhang, R. Vajtai, G. Gupta, C. K. Chan, T. E. Beechem, M. Ajayan, A. D. Mohite, T. Ohta. Experimental Determination of the Ionization Energies of MoSe2, WS2, and MoS2 on SiO2 Using Photoemission Electron Microscopy. ACS Nano, (2017) 11, 8223–8230.
[13] F. S. J. D. Cain, J. Wu, V. Dravid. Growth Mechanism of Transition Metal Dichalcogenide Monolayers: The Role of Self-Seeding Fullerene Nuclei. ACS Nano, (2016) 10, 5440–5445.
[14] H. Abouelkhair. Growth and Doping of MoS2 Thin Films for Electronic and Optoelectronic Applications. PhD Thesis. Florida Central University (2017).
[15] M. V. R. Shidpour, H. Maghsoudi, A. Simchi. A general two-step chemical vapor deposition procedure to synthesize highly crystalline transition metal dichalcogenides: A case study of MoS2, Materials Research Bulletin. (2016) 76, 473-478.
[16] A. A.-z. M. Gholampour, L. Shekari, R. Poursalehi, M. Soltanzadeh. Green Method for Synthesizing Gallium Nitride Nanostructures at Low Temperature. J. Optoelectronical Nanostructures, (2018) 3, 51-64.
[17] R. D. B. Taunk, D. Bisen, R. K. Tamrakar, N. Rathord. Synthesis and optical properties of chemical bath deposited ZnO thin film. Karbala International Journal of Modern Science, (2015) 1, 159-165.
[18] J. Z. S. Manouchehri, M. H. Yousefi. Substrate Effects on the Structural Properties of Thin Films of Lead Sulfide. J. Optoelectronical Nanostructures, (2018) 3, 1-18.
[19] K.M.Garadkara, A.A.Patila Hankarea ,A.Chateb D.J.Sathea S.D.Delekarc. MoS2: Preparation and their characterization. J. Alloys and Compounds, (2009) 487, 786-789.
[20] S. V. V. C. Byon. Synthesis and Characterization of Molybdenum Disulfide Nanoflowers and Nanosheets: Nanotribology. J. Nanomaterials, (2015) 710462.
