Growth and Characterization of Thin MoS2 Films by Low- Temperature Chemical Bath Deposition Method
الموضوعات : فصلنامه نانوساختارهای اپتوالکترونیکی
Mahdi Zavvari
1
,
Yashar Zehforoosh
2
1 - Department of Electrical Engineering, Urmia branch, Islamic Azad
University, Urmia, Iran
2 - Department of Electrical Engineering, Urmia branch, Islamic Azad
University, Urmia, Iran
الکلمات المفتاحية: Growth, Chemical bath deposition, Transition Metal Dichacogenide, Molybdenum disulfide,
ملخص المقالة :
Transition metal dichalcogenide (TMDC) materials are very important in
electronic and optical integrated circuits and their growth is of great importance in this
field. In this paper we present growth and fabrication of MoS2 (Molibdan DiSulfide)
thin films by chemical bath method (CBD). The CBD method of growth makes it
possible to simply grow large area scale of the thin layers of this material in lower
temperatures (near room temperature) and atmosphere pressure in comparison to costly
complicated growth methods. The results show the effect of growth temperature and
time on the quality of layers and XRD measurements were performed for analysis of
crystalline structure of layers. The results show that for the bath temperature of 60oC
and for 75 min growth time, better quality of layers can be obtained with low intensity.
The low intensity of XRD peaks belongs to poor crystalline structure of layers. For
higher bath temperatures, the films lose their uniformity. The results were confirmed by
SEM images.
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