A Ultra Wideband (5–50 GHz) and Low Power Active Balun Using 0.18 µm CMOS technology

Subject Areas : Majlesi Journal of Telecommunication Devices

Received: 2013-09-23 Accepted : 2013-09-23 Published : 2013-01-01

Keywords: en,

Abstract :

A new ultra wideband 5 to 50 GHz and low power single ended input, differential output active balun using 0.18µm CMOS technology is presented in this paper. Using a pair of common-source and common gate NMOS transistors with utilize active load PMOS transistors. Total power consumption of the proposed active balun circuit is 5mw at the supply voltages of ±1.2v much less than 11.5mw of the conventional active balun.