Memory effect in silicon nitride deposition using ICPCVD technique
الموضوعات : Journal of Theoretical and Applied PhysicsSunil Kumar 1 , D. S. Rawal 2 , Hitendra K. Malik 3 , Rajeev Sanwal 4 , S. A. Khan 5 , Seema Vinayak 6
1 - Solid State Physics Laboratory
2 - Solid State Physics Laboratory
3 - Department of Physics, Indian Institute of Technology Delhi
4 - Solid State Physics Laboratory
5 - Interstate University Accelerator Center
6 - Solid State Physics Laboratory
الکلمات المفتاحية: Silicon Nitride (SiN), ICPCVD, PECVD, ERDA, HEMT, Current collapse,
ملخص المقالة :
AbstractIn this study, a plasma-based low-temperature, low-pressure SiN film deposition is investigated for device applications. Ammonia, nitrogen and silane are being used for optimization of the quality of SiN film for device passivation by ICPCVD. Characterization of SiN film is done using elastic recoil detection analysis, AFM, FTIR and ellipsometry. The effect of previous process parameters on subsequent process is called memory effect, which has been investigated by all the characterization techniques. During deposition, this effect has been observed for the same parameters that are used to maintain the stoichiometry of the film. It has been observed that some of the residues of gases used for SiN deposition remain present even after the deposition in the chamber and are carried over for the next deposition process and alter the film property, though parameters such as flow rate, temperature, pressure and time remain fixed. This memory effect alters the film surface roughness and stoichiometry thus affecting device characteristics after passivation.
