Effect of variation of specifications of quantum well and contact length on performance of InP-based Vertical Cavity Surface Emitting Laser (VCSEL)
الموضوعات : فصلنامه نانوساختارهای اپتوالکترونیکی
Abbas Ghadimi
1
,
Mohamad Ahmadzadeh
2
1 - Department of Electrical Engineering, Lahijan Branch, Islamic Azad University, Lahijan, Iran
2 - Department of Electrical Engineering, Rasht Branch, Islamic Azad University, Rasht, Iran
الکلمات المفتاحية: Vertical Cavity Surface Emitting Laser (VCSEL), Quantum well, Contact Length, Threshold Current, Output Power,
ملخص المقالة :
Abstract: In this study, the effects of variation of thickness and the number of quantum
wells as well as the contact length were investigated. In this paper, a vertical cavity surface
emitting laser was simulated using of software based on finite element method. The
number of quantum wells was changed from 3 to 9 and the results which are related to
output power, resonance wavelength and threshold current were extracted. Output
specifications in terms of quantum wells thicknesses of 3.5nm to 9.5nm were evaluated.
Contact thickness is also changed from 0.5μm to 3μm. Results showed that as the number
of quantum wells increased, the resonance wavelength also increased and photon energy
decreased. By reducing the thickness of the quantum well, the threshold current and
radiation wavelength were also decreased. By increasing the contact length, threshold
current and output power increased. Temperature inside the network and density of
photon were increased as the contact length increased
[1] K. Murali Krishna, M. Ganesh Madhan, Numerical Simulation of High-Temperature VCSEL Operation and Its Impact on Digital Optical Link Performance, Presented at Nano Elec. Circuits and Com. Sys., (2018, August), [Online]. Available: https://link.springer.com/chapter/10.1007/978-981-13-0776-8_31.
[2] Vladimir P. Kalosha, Vitaly A. Shchukin, Nikolay Ledentsov, Nikolay N. Ledentsov, Comprehensive Analysis of Electric Properties of Oxide-Confined Vertical-Cavity Surface-Emitting Lasers, IEEE Journal of Sel. Top. in Quantum Elec., [Online]. 25(6) (2019, July),1-9 ,Available: https://ieeexplore.ieee.org/abstract/ document/ 8765 756.
[3] A. I. Nashed, Michel Lestrade, Z. Q. Li, Z. M. Simon Li, Efficient Optical Modeling of VCSELs using Full-Vectorial FDFD method, Presented at International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), (2019, July) [Online].
Available: https://ieeexplore.ieee.org/abstract/document/8806850.
[4] R Sarzala, W Nakwaski, Methods to improve performance of the 1.3ىm Oxide Confined GaInNAs/GaAs quantum well VCSELs, 12th International Conference on Transparent Optical Networks(ICTON), (2010, June) [Online]. Available: https://ieeexplore.ieee.org/document/5549020.
[5] R Sarzala, L Piskorsi, R Kurdawiec, W Nakwaski, Optimization of GaInNAs quantum well VCSEL emitting at 2.33 ىm, App. Phys. A, [Online]. 115(3), (2014, June) 961-969,
Available: https://link.springer.com/article/10.1007/s00339-013-7915-9.
[6] P.S Menon, K Kandiah, S Sharri, N.Y Majlis, Comparison of mesa and device diameter variation in double wafer- fused multi quantum-well, long wavelength, VCSELs, Sains Malaysiana, [Online]. 6(40), (2011, November) , 631-636, Available: https://www.semanticscholar.org/paper/InP-based-multi-quantum-well-mole-fraction-effects-Visvanathan-Shaari/58b2febc711943d3ba9a3aea11ef7a7f34fab215.
[7] D. H. Hsieh, A. J. Tzou, T. S. Kao, F. I. Lai, D. W. Lin, B. C. Lin, T. C. Lu, W. C. Lai, C. H. Chen, and H. C. Kuo, Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer, Optic. Exp., [Online]. 23(21), (2015,Oct ) 27145-27151, Available: https://www.osapublishing.org/oe/ abstract.cfm?uri=oe-23-21-27145.
[8] Priyanka Goyal; Mohit Sharma; Ananya Jha; Monika Kumari; Somendra P. Singh; Nikita Singh, Gurjit Kaur, Design and analysis of VCSEL LASER for
third window of optical communication system, 2016 International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT), [Online]. Available: https://ieeexplore.ieee.org/document/7755512.
[9] Huize Fan; Kai Liu; Qi Wei; Min Zhang; Xiaomin Ren; Yongqing Huang; Xiaofeng Duan, The simulation of monolithic vertical integration of VCSEL and RCE photodiode, 16th International Conference on Optical Communications and Networks (ICOCN), (2017, Aug), [Online]. Available: https://ieeexplore.ieee.org/ document/8121413.
[10] P.V. Mena; J.J. Morikuni; S.-M. Kang; A.V. Harton; K.W. WyattA, simple rate-equation-based thermal VCSEL model, J. Light wave. Tech., [Online]. 17(5), (1999, May), 865 – 872, Available: https://ieeexplore.ieee.org/document/762905.
[10] M.Rezvani. J, Simulation of Direct Pumping of Quantum Dots in a Quantum Dot Laser,” JOPN. [Online]. 2(2), (2017), 61-70, Available: http://jopn.miau.ac.ir/ article_2425.html.
[11] M. Riahinasab, E.Darabi, Analytical Investigation of Frequency Behavior in Tunnel Injection Quantum Dot VCSEL, ,” JOPN. [Online]. 3(2), (2018), 65-86, Available: http://jopn.miau.ac.ir/article_2876.html.
[12] Z. Danesh. K, Improving Blue InGaN Laser Diodes Performance with Waveguide Structure Engineering,” JOPN. [Online]. 4(1), (2019), 1-26, Available: http://jopn.miau.ac.ir/article_3382.html.
[13] M.Zaki, M.hosseini, Controlling the Occurrence of Rogue Waves in an Optically Injected Semiconductor Laser via Changing The Injection Strength,”JOPN. [Online]. 2(3), (2017), 39-46, Available: http://jopn.miau.ac.ir/article_2430.html.
[14] Farah Z, Jasim, Khalid Omar and Z.Hassan, Multiple quantum well of GaAs VCSEL structure, Journal of Opt. and adv. Mat., [Online]. 11(11), (2009, November), 1723-1727, Available: https://old.joam.inoe.ro/ index.php?option= magazine&op =view &idu=2222&catid=44.
[15] A.Ghadimi, M.Ahmadzadeh, The Effect of Doping Change in Distributed Bragg Reflector (DBR) Layers on the Operation at Different Temperatures of an InP-based Vertical Cavity Surface Emitting Laser (VCSEL),” Lasers. In. Eng. [Online]. 40 (2018) 149–159, Available:https://www.oldcitypublishing.com/journals/lie-home/lie-issue-contents/lie-volume-40-number-1-3-2018/lie-40-1-3-p-149-159/.
[16] Zandi Goharrizi, Gh. Alahyarizadeh, Z.Hassan, H.Abu Hassan, Low-dimensional Systems and Nanostructures,” Physica E. [Online]. 50 (2013, May) 61-66, Available: https://www.sciencedirect.com/science/article/pii/S1386947713000532.
[17] Yuta Suzuki, Shin-ichiro Tezuka, Numerical simulation of 3D Fox–Li integral equation described by Rayleigh–Sommerfeld diffraction for MEMS-VCSEL,” Optical Review [Online]. 26 (2019, October) 430-435, Available: https://link.springer.com/article/10.1007/s10043-019-00551-1
[18] Karan Mehta, Yuh-Shiuan Liu, Jialin Wang, Hoon Jeong, Theeradetch Detchprohm, P. Douglas Yoder, Russell D. Dupu, Thermal Design Considerations for III-N Vertical-Cavity Surface-Emitting Lasers Using Electro-Opto-Thermal Numerical Simulations,” IEEE Journal of Quantum Electronics [Online]. 55(5) (2019, October) 1-8.
Available:https://ieeexplore.ieee.org/abstract/document/8817911
