فهرست مقالات minimum tunneling length

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  1 - An innovative method for estimating optimal Gate work function and dielectric constant of a nanoscale DG-TFET based on analytical modeling of tunneling length in ambipolar, Off and ON states
  Ali Heydari Seyed Ali Sedigh Ziabari Fayzollah Khorramrouz
  10.22034/jna.2020.1881749.1166
  In this paper, we propose an innovative and low computational cost approach that can be used to find optimal values of parameters of a nanoscale dual gate tunneling field-effect transistor (DG-TFET). In this way, after obtaining analytical expressions for potential and چکیده کامل

  In this paper, we propose an innovative and low computational cost approach that can be used to find optimal values of parameters of a nanoscale dual gate tunneling field-effect transistor (DG-TFET). In this way, after obtaining analytical expressions for potential and energy bands of the device using the Poisson equation, the tunneling length is extracted at source-channel and channel-drain tunnel junctions in the AMBIPOLAR, Off and On states. Due to the tunneling length equation, the different values of gate work function and dielectric constant of the device are swept to determine the minimum and maximum design limits. According to the above range, the necessary checks are made to reach the local optimal behaviors. These optimum points are explained based on the achievement of optimal device performance. The accuracy and consistency of the proposed model is validated with the TCAD simulation results. The present model can be a handful for the study of TFET performance. پرونده مقاله
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  • صفحه چکیده
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  2 - An innovative method for estimating optimal Gate work function and dielectric constant of a nanoscale DG-TFET based on analytical modeling of tunneling length in ambipolar, Off and ON states
  Fayzollah Khorramrouz Seyed Ali Sedigh Ziabari Ali Heydari
  10.22034/jna.2020.680049
  In this paper, we propose an innovative and low computational cost approachthat can be used to find optimal values of parameters of a nanoscale dual gatetunneling field-effect transistor (DG-TFET). In this way, after obtaining analyticalexpressions for potential and ene چکیده کامل

  In this paper, we propose an innovative and low computational cost approachthat can be used to find optimal values of parameters of a nanoscale dual gatetunneling field-effect transistor (DG-TFET). In this way, after obtaining analyticalexpressions for potential and energy bands of the device using the Poissonequation, the tunneling length is extracted at source-channel and channel-draintunnel junctions in the AMBIPOLAR, Off and On states. Due to the tunnelinglength equation, the different values of gate work function and dielectric constantof the device are swept to determine the minimum and maximum designlimits. According to the above range, the necessary checks are made to reachthe local optimal behaviors. These optimum points are explained based on theachievement of optimal device performance. The accuracy and consistency ofthe proposed model are validated with the TCAD simulation results. The presentmodel can be a handful for the study of TFET performance. پرونده مقاله