فهرست مقالات Field effect transistors

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  1 - First principle study of the effect of defects on performance of single-molecule pentacene field effect transistors
  Bahniman Ghosh Akash Gramin
  10.1007/s40094-015-0182-8
  AbstractIn this work, we have performed first principle study on a single-molecule pentacene field effect transistor and studied various oxygen- and hydrogen-induced defects in the same device configuration. Further, we have investigated the effect of these defects on t چکیده کامل

  AbstractIn this work, we have performed first principle study on a single-molecule pentacene field effect transistor and studied various oxygen- and hydrogen-induced defects in the same device configuration. Further, we have investigated the effect of these defects on the various electronic transport properties of the device and compared them with those of the original device along with reporting the negative differential region window and the peak-to-valley ratio in different cases. For this purpose, we have applied the density functional theory in conjugation with non-equilibrium green’s function (NEGF) formalism on a 14.11 Å pentacene device to obtain the I–V characteristics, conductance curves and transmission spectra in various device scenarios. پرونده مقاله
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  2 - Design and Implementation of MOSFET Circuits and CNTFET, Ternary Multiplier in the Field of Galois
  Malakeh Karimghasemi-rabori Peiman Keshavarzian
  Due to the high density and the low consumption power in the digital integrated circuits, mostly technology of CMOS is used. During the past times, the Metal oxide silicon field effect transistors (MOSFET) had been used for the design and implementation of the digital i چکیده کامل

  Due to the high density and the low consumption power in the digital integrated circuits, mostly technology of CMOS is used. During the past times, the Metal oxide silicon field effect transistors (MOSFET) had been used for the design and implementation of the digital integrated circuits because they are compact and also they have the less consumption power and delay to the other transistors. But after discovering the carbon nano-tubes by Ijima et al., several studies have been done on these structures in the other sciences. Single cover nano-tubes due to the electrical traits such as low consumption power, high speed, the compact area with the smallest dimensions in the form of nano by the unique configuration, multiple threshold recognition, least threshold of noise, etc. better than the other nano-tubes. Over the past times, bi-valued logic was used but these days, multi-valued logic (due to the features such as high speed in the transfer of information, decrease of the number of gate, the decrease of operation, etc) is being used. Among the multi-valued logics, triple one because of less evaluated cost of installation and the simple method for implementation of the electronic circuits, is considered more than the other. In this article, by the use of triple-valued field of Galois, the multiplier circuits based on Metal oxide silicon field effect transistors (MOSFET) as well, the transistors of field effect of semi-carbon nano-tubes were designed and implemented. پرونده مقاله