فهرست مقالات Ambipolar current

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  1 - Design and Realization of a Junction-less TFET for Analog and Digital Applications Based on Strain Engineering
  Fayzollah Khorramrouze Seyed Ali Sedigh Ziabari Ali Heydari
  10.30486/mjtd.2022.695917
  This paper investigates the effects of the uniaxial tensile strain on the performance of an all silicon junction-less tunneling field-effect transistor (JLTFET) for analog and digital applications. The behavior of the JLTFET under global and local uniaxial strain are st چکیده کامل

  This paper investigates the effects of the uniaxial tensile strain on the performance of an all silicon junction-less tunneling field-effect transistor (JLTFET) for analog and digital applications. The behavior of the JLTFET under global and local uniaxial strain are studied based on the energy band diagram at ON, OFF, and ambipolar states. Under local uniaxial tensile strain, it has been observed that the tunneling length at the channel/source interface in the ON state has been decreased and at the channel/drain interface in the OFF state has been increased. Simulations illustrate improvements in ON current, ION/IOFF and steep sub threshold swing (SS) and superior transconductance (gm). The strained JLTFET, also demonstrates capability for low-voltage application and high cut-off frequency (fT) and suppressed ambipolar current (Iamb). پرونده مقاله
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  2 - Influence analysis of dielectric pocket on ambipolar behavior and high-frequency performance of dual material gate oxide stack -double gate Nano-Scale TFET
  Melisa Ebrahimnia Seyed Ali Sedigh Ziabari Azadeh Kiani-sarkaleh
  10.22034/jna.2022.1943631.1277
  In this paper, a new Nano-Scale structure of dual material gate oxide stack-double gate TFET (DMGOS-DG TFET) with the inclusion of the dielectric pocket (DP) in the drain region is proposed. Hence the gate consists of three parts, named M1, M2, and M3 with work function چکیده کامل

  In this paper, a new Nano-Scale structure of dual material gate oxide stack-double gate TFET (DMGOS-DG TFET) with the inclusion of the dielectric pocket (DP) in the drain region is proposed. Hence the gate consists of three parts, named M1, M2, and M3 with work functions ϕM1, ϕM2, and ϕM3 respectively. The work function engineering with the gate oxide stack (SiO2 as the bottom layer and HfO2 as the top layer) improves ON current, leakage current, and ambipolar behavior. In addition, the dielectric pocket (DP) has been used in the drain region to achieve better ambipolar performance. Moreover, it is found that in comparison with the low-k DP (SiO2), the presence of the high-k DP (HfO2) provides a lower ambipolar current due to the greater depletion width in the drain region. Furthermore, the ambipolar behavior of the DP-DMGOS-DG TFET structure has been investigated by changing the length and thickness of the high-k DP. Finally, the comparative analysis of DMGOS-DGTFET and high-k DP-DMGOS-DG TFET on high-frequency performance reveals that DP inclusion reduces the gate-to-drain capacitance, which leads to the improved cut-off frequency. پرونده مقاله