A 3.1-10.6 GHZ Ultra-Wideband CMOS Low Noise Amplifier in 0.18 μm CMOS Technology
Subject Areas : Majlesi Journal of Telecommunication Devices
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Keywords: en, CMOS, low noise amplifier, gain, Ultra-wideband,
Abstract :
A new ultra-wideband 3.1-10.6 GHz low noise amplifier(LNA), designed in chartered 0.18μm technology, is presented in this paper.By using series inductive peaking in the feedback loop is used to improve the basndwidth of the LNA. Based on the noise-canceling technique,voltage gain is increased. Measurements show that the S11 and S22 are less than -10 dB, and the maximum amplifier gain S21 gives 12.9dB, and the minimum noise figure is 2.6dB, and the power consumption is 13.6 mW from 1.8V supply voltage.
[1] A.Tanaka et al.,(2004). A 1.1 V 3.1-9.5 GHz MB-OFDM UWB transceiver in 90 nm CMOS. Journal of Solid-State circuits,p. 120-121.
[2] Hi Zheng et al., (2009). A 3.1GHz-8.0 GHz Single-Chip Transceiver for MB-OFDM UWB in 0.18-μm CMOS Process. IEEE Journal of Solid-State circuits.vol.44,no.2,p. 120-121.
[3] Le-Hou Chen., (2007).An Ultra Wideband 0.4-10 GHz LNA in 0.18μm CMOS. IEEE Transaction on circuits and systems-II,vol.54,no.3,p.217-221.
[4] Meng-Ting Hsu et al., (2013).Design of low power UWB LNA based on common source topology with current-reused technique. Microelectronics Journal, vol.44,p.1223-1230.
[5] Yang Lu.et al., (2006).A Novel CMOS Low-Noise Amplifier Design for 3.1 to 10.6-GHz Ultra-Wide-Band Wireless Receivers. IEEE Transactionson Circuitsand systems-I,vol.53,no.8,p.1683-1691
[6] Yi-Jing Lin et al., (2007).A 3.1-10.6 GHz ultra-wideband CMOS low noise amplifier with current-reused technique,Microwave and Wireless Components Letters,vol.17,no.3,p.232-234
[7] Ke-Hou Chen et al., (2007).An Ultra-Wide-Band 0.4-10 GHz LNA in 0.18μm CMOS,IEEE Circuits and systems.vol.54,no.3,p.217-221.
[8] Ke-Hou Chen and Shen-Iuan Liu,(2012),Inductorless Wideband CMOS Low-Noise Amplifiers Using Noise-Canceling Technique,IEEE Transaction on circuits and systems-I,vol.59,no.2,p305-314.
[9] Dong Huang et al,(2015). A resistive-feedback LNA in 65 nm CMOS with a gate inductor for bandwidth extension, Microelectronic Journal,vol.46,no.1,p.103-110.
[10] P.Heydari,(2007).Design and analysis of a performance-optimized CMOS UWB distributed LNA,IEEE Journal of Solid-State Circuits,vol.42,no.9,p1892-1905.
[11] Ke-Hou Chen and Shen-Iuan Liu,(2012),Inductorless Wideband CMOS Low-Noise Amplifiers Using Noise-Canceling Technique,IEEE Transaction on circuits and systems-I,vol.59,no.2,p305-314.
[12] Qiuzhen Wan, Chunhua Wang., (2011).Design of 3.1-10.6 GHz ultra-wideband CMOS low noise amplifier with current reuse technique. International Journal of Electronic and Communications.vol.65,no.1,p.1006-1011.