AbstractMesoporous silicon (mesoPSi) layers fabricated by the photoelectrochemical etching (PECE) method in hydrofluoric acid (HF) are active as carbon monoxide gas sensors. The modified porous silicon (PSi) can be used with noble metals to manufacture an effective gas sensor. Embedded gold, platinum, and palladium nanoparticles Au, Pt, and Pd-NPs could modify the surface morphology of mesoPSi and form mesoPSi/AuPtPd-NPs hybrid structures through a simple and dipping process in fixed salt concentrations. The morphology of the hybrid structures has been studied using scanning electron microscopy and X-ray diffraction. The prepared gas sensor has measured the electrical characteristics at room temperature. Shape, nanoparticle size, and specific surface area strongly influenced the current–voltage characteristics. The results show that Au, Pd, and Pt-NPs sizes prepared by the dipping process for mesopore-like structures were in the range from 0.64 to 7.53 nm. Besides, considerable improvements in the response, recovery times and sensitivity of gas sensor were noticed when decreasing the incorporated Au, Pd, and Pt-NPs to the mesoPSi matrix. پرونده مقاله

AbstractThe present study focuses on the structural and electrical properties of doped zinc–lead iodide (Zn–PbI2) as-deposited film. Lead iodide (PbI2) nanostructure was successfully prepared by thermal evaporation method on a glass substrate at room temperature. The analysis, characterization, and structural properties of PbI2 were achieved using X-ray diffraction (XRD) and scanning electron microscopy. The PbI2 was polycrystalline and had a hexagonal structure as proved using XRD. The measured values are in agreement with other experimental and theoretical data. Furthermore, the present research studied the effect of doping on the physical properties of lead iodide with zinc dopants at different weights (0.02, 0.04, 0.06, and 0.08) mg. The electrical properties of the fabricated metal–semiconductor–metal photodetector based on PbI2 and Pb1−xZnxI2 layers prepared on glass substrates by thermal evaporation method were investigated. The obtained results of Schottky barrier heights for Pb0.98Zn0.02I2 were significant. The current–voltage characteristics of the Pb0.98Zn0.02I2 thin film have acted as a Schottky contact in dark and under white light, 460-nm light. The light responsivity has shown a peak at 460-nm chopped light. At a bias voltage of 1, 3, and 5 V, the photocurrent rise and decay times were investigated. The device has shown faster response times for 460-nm light. This fast response was attributed to the high quality of polycrystalline and showed a high quantum efficiency of 9.19 × 102% when it was illuminated by 460-nm light under the bias of 3 V. پرونده مقاله