Structural and morphological properties of ITO thin films grown by magnetron sputtering

محورهای موضوعی : Journal of Theoretical and Applied Physics

Z. Ghorannevis ¹ , E. Akbarnejad ² , M. Ghoranneviss ³

1 - Department of Physics, Karaj Branch, Islamic Azad University
2 - Plasma Physics Research Centre, Science and Research Branch, Islamic Azad University
3 - Plasma Physics Research Centre, Science and Research Branch, Islamic Azad University

تاریخ انتشار : 1394/09/10

کلید واژه: Indium tin oxide, Magnetron sputtering, Thickness,

چکیده مقاله :

AbstractPhysical properties of transparent and conducting indium tin oxide (ITO) thin films grown by radiofrequency (RF) magnetron sputtering are studied systematically by changing deposition time. The X-ray diffraction (XRD) data indicate polycrystalline thin films with grain orientations predominantly along the (2 2 2) and (4 0 0) directions. From atomic force microscopy (AFM) it is found that by increasing the deposition time, the roughness of the film increases. Scanning electron microscopy (SEM) images show a network of a high-porosity interconnected nanoparticles, which approximately have a pore size ranging between 20 and 30 nm. Optical measurements suggest an average transmission of 80 % for the ITO films. Sheet resistances are investigated using four-point probes, which imply that by increasing the film thickness the resistivities of the films decrease to 2.43 × 10−5 Ω cm.