Study of the efficiency loss in GaN-based light emitting diodes
محورهای موضوعی : journal of Artificial Intelligence in Electrical Engineering
1 - گروه فیزیک، واحد اهر، دانشگاه آزاد اسلامی، اهر، ایران
کلید واژه: light emitting diode, efficiency loss, piezoelectric, blue shift,
چکیده مقاله :
In this paper, the efficiency loss in GaN-based light emitting diodes (LEDs) has been studied. In a LED, as the junction temperature increases, the wavelength of the emission peak shifts. GaN-based LEDs exhibit piezoelectric (PZ) behavior. In InGaN blue/green LEDs, with increasing applied current, a shift to the blue region is observed due to the Quantum Confined Stark Effect (QCSE) caused by PZ fields. At low current density, the efficiency of InGaN/GaN multiple quantum well (MQW) LEDs has the highest value and decreases rapidly with increasing current.
Keywords: light emitting diode, efficiency loss, piezoelectric, blue shift
In this paper, the efficiency loss in GaN-based light emitting diodes (LEDs) has been studied. In a LED, as the junction temperature increases, the wavelength of the emission peak shifts. GaN-based LEDs exhibit piezoelectric (PZ) behavior. In InGaN blue/green LEDs, with increasing applied current, a shift to the blue region is observed due to the Quantum Confined Stark Effect (QCSE) caused by PZ fields. At low current density, the efficiency of InGaN/GaN multiple quantum well (MQW) LEDs has the highest value and decreases rapidly with increasing current.
Keywords: light emitting diode, efficiency loss, piezoelectric, blue shift
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