Study of the efficiency loss in GaN-based light emitting diodes
الموضوعات : journal of Artificial Intelligence in Electrical Engineering
1 - گروه فیزیک، واحد اهر، دانشگاه آزاد اسلامی، اهر، ایران
الکلمات المفتاحية: light emitting diode, efficiency loss, piezoelectric, blue shift,
ملخص المقالة :
In this paper, the efficiency loss in GaN-based light emitting diodes (LEDs) has been studied. In a LED, as the junction temperature increases, the wavelength of the emission peak shifts. GaN-based LEDs exhibit piezoelectric (PZ) behavior. In InGaN blue/green LEDs, with increasing applied current, a shift to the blue region is observed due to the Quantum Confined Stark Effect (QCSE) caused by PZ fields. At low current density, the efficiency of InGaN/GaN multiple quantum well (MQW) LEDs has the highest value and decreases rapidly with increasing current.
Keywords: light emitting diode, efficiency loss, piezoelectric, blue shift
[1] G. P. Agrawal, and N. K. Dutta, Semiconductor Lasers, (van Nostrand Reinhold, New York, 1986).
[2] J. M. Senior, Optical Fiber Communications, Principles and Practice, (Prentice Hall, 1985).
[3] X. Wanga, H. -Q. Suna, X. Yanga, X. -Y. Yia, J. Suna, X. Zhanga, T. -Y. Liua, Zh. -Y. Guoa, and L. -Z. Zhaoa, “Performance enhancement of AlGaN-based UV-LEDs inserted with a pindoped AlGaN layer between the active region and electron-blocking layer,” Mat. Sci. Semi. Proc. 83, 133-138 (2018).
[4] T. -H. Wang, J. -L. Xu, “Advantage of InGaN-based light-emitting diodes with trapezoidal electron blocking layer,” Mater. Sci. Semicond. Process. 29, 95-101 (2015).
[5] M. Xu, Q. Zhou, H. Zhang, H. Wang, X. Zhang, “Improved efficiency of near-ultraviolet LEDs using a novel p-type AlGaN hole injection layer,” Superlattices Microstruct. 94, 25-29 (2016).
[6] Y. Li, S. C. Chen, W. Tian, Z. H. Wu, Y. Y. Fang, J. N. Dai, C. Q. Chen, “Advantages of AlGaN-Based 310-nm UV Light-Emitting Diodes With Al Content Graded AlGaN Electron Blocking Layers,” IEEE Photon. J. 5, 8200309 (2013).
[7] P. M. Tu, C. Y. Chang, S. C. Huang, C. H. Chiu, J. R. Chang, W. T. Chang, D. S. Wu, H. W. Zan, C. C. Lin, H. C. Kuo, C. P. Hsu, “Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier,” Appl. Phys. Lett. 98, 211107 (2011).
[8] X. Yang, H. Q. Sun, X. C. Fan, Z. D. Zhang, J. Sun, X. Y. Yi, Z. Y. Guo, “Optimization on the luminous efficiency in AlGaN-based ultraviolet light-emitting diodes by amendment of a superlattice hole reservoir layer,” Superlattice Microstruct. 101, 293-298 (2017).
[9] V. P. Sirkeli, O. Yilmazoglu, S. Al-Daffaie, I. Oprea, D. Sheng Ong, F. Küppers, H. L. Hartnagel, “Efficiency enhancement of InGaN/GaN light-emitting diodes with pin-doped GaN quantum barrier,” J. Phys. D 50, 035108 (2017).
[10] J. Li, Z. Y. Guo, F. Z. Li, H. Lin, C. Li, S. L. Xiang, T. F. Zhou, N. Q. Wan, Y. Liu, “Performance enhancement of blue light-emitting diodes by using special designed n and p-type doped barriers,” Superlattice Microstruct. 85, 454-460 (2015).
[11] C. Zhang, H. Q. Sun, X. N. Li, X. Yang, H. Sun, X. C. Fan, Z. D. Zhang, Z. Y. Guo, “Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers”, Chin. Phys. B 25, 028501 (2016).
[12] A. B. M. H. Islam, J. -I. Shim, and D. -S. Shin, “Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation,” Materials 11, 743 (2018).
[13] J. Piprek, Semiconductor Optoelectronic Devices, Introduction to Physics and Simulation, (Elsevier Science, USA, 2003).
[14] H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, “P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (leebi),” Jap. J. Appl. Phys. 28, 2112-2114 (1989).
[15] G. Fasol, “Room temperature blue gallium nitride laser diode,” Science 272, 1751-1752 (1996).
[16] T. Mukai, K. Takekawa, and S. Nakamura, "InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates,” Jpn. J. Appl. Phys. 37, L839 (1998).
[17] S. D. Lester, F. A. Ponce, M. G. Craford, and D. A. Steigenvald, “High dislocation densities in high efficiency GaN‐based light‐emitting diodes,” Appl. Phys. Lett. 66, 1249 (1995).
[18] Sh. Nakamura, and Sh. F. Chichibu, Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes, (CRC Press, Florida, 2000).
[19] H. Morkoc, Nitride Semiconductors and Devices, (Springer Series in Materials Science, 1999).
[20] F. Habel, and M. Seyboth, “Reduction of dislocation density and dislocation analysis of MOVPE grown GaN Layers,” 10th European Workshop on MOVPE, (Lecce, Italy, 8−11 June, 2003).
[21] A. M. Fox, Optical Properties of Solids, (Oxford University Press, 2001).
[22] H. Absalan, “Comparative Study of Diodes and their Optical Performance,” journal of Artificial Intelligence in Electrical Engineering 12, 35-45 (2023).
[23] G. -B. Lin, D. Meyaard, J. Cho, E. F. Shubert, H. Shim, and C. Sone, “Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency,” Appl. Phys. Lett. 100, 161106 (2012).
[24] J. -R. Chen, Y. -C. Wu, S. -C. Ling, T. -S. Ko, T.-C. Lu, H.-C. Kuo, Y.-K. Kuo, S.-C. Wang Lu, “Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes,” Appl. Phys. B 98, 779-789 (2010).
[25] Y. Yang, X. A. Cao, C. H. Yan, “Rapid efficiency roll-off in high-quality green light-emitting diodes on freestanding GaN substrates,” Appl. Phys. Lett. 94, 041117 (2009).
[26] H. -Y. Ryu, “Effect of Internal Polarization Fields in InGaN/GaN Multiple-Quantum Wells on the Efficiency of Blue Light-Emitting Diodes,” Jpn. J. Appl. Phys. 51, 09MK03 (2012).
