اثر افزایش پارامتر پوشش دهندگی-لیزری بر خواص الکترونی و نوری چاه کوانتومی دوگانه سهموی باند-ظرفیتی GaAsSb/GaAs
محورهای موضوعی : تحقیقات در علوم مهندسی سطح و نانو مواد
سهیلا حقیقی
1
,
آزاده حقیقت زاده
2
,
امین عطارزاده
3
1 - گروه فیزیک، واحد اهواز، دانشگاه آزاد اسلامی، اهواز، ایران
2 - مرکز تحقیقات مهندسی سطح پیشرفته و نانومواد، گروه فیزیک، واحد اهواز، دانشگاه آزاد اسلامی، اهواز، ایران
3 - گروه علوم پایه، موسسه آموزش عالی جهاد دانشگاهی خوزستان، ایران
کلید واژه: پارامتر پوشش دهندگی-لیزری, جرم وابسته به موقعیت, چاه کوانتومی , حفره سنگین, خواص نوری غیرخطی ,
چکیده مقاله :
در این مطالعه، خواص الکترونی و نوری چاه کوانتومی دوگانه سهموی باند- ظرفیتی GaAsSb/GaAs پوشش دهی شده با لیزر مورد پژوهش قرار گرفتند. اثر افزایش پارامتر پوشش دهندگی – لیزری بر حالت های مقید الکترونی و توابع موج متناظر با استفاده از روش اجزای محدود (FEM) در نرم افزار کامسول مالتی فیزیکس و در تقریب جرم موثر وابسته به موقعیت با در نظر گرفتن سری فوریه- فلوکت و تبدیل کرامرز- هنبرگر بررسی شد. عبارتی تحلیلی برای توصیف جرم موثر وابسته به موقعیت حفره سنگین به عنوان تابعی از هندسه چاه برای اولین بار توسعه داده شد.حالت های های مقید الکترونی حفره سنگین با در نظز گرفتن چگالی احتمال حضور در چاه کوانتومی مطالعه شدند. نتایج الکترونی بدست آمده گذاری را از یک چاه کوانتومی دوگانه با پهنای سد مرکزی صفر به یک نوع پتانسیل سه گانه بعد از اعمال میدان لیزری و سپس بازگشت به یک نوع چاه کوانتومی دوگانه با یک سد مرکزی گسترده شده هنگامی که پارامتر پوشش دهندگی – لیزری افزایش یافته است نشان می دهد . مشخصه های جذب و شکست نوری خطی و غیرخطی مرتبه سوم با استفاده از روش ماتریس چگالی و با در نظر گرفتن یک سیستم دو ترازه برای تراز پایه و اولین حالت برانگیخته مطالعه شدند.
In this study, electronic and optical properties of a laser-dressed double GaAsSb/GaAs parabolic valence-band quantum well were investigated. The effect of increasing laser-dressing parameter on electronic bound states and the corresponding wave functions was surveyed using the Finite Element Method (FEM) in COMSOL Multiphysics and the position-dependent effective mass approximation considering Floquet series and Kramers-Henneberger transformation. An analytical expression was developed to describe the position-dependent effective mass of a heavy hole as a function of the well's geometry for the first time. The electronic bound states of a heavy hole were studied by considering the probability density of the presence in the quantum well. The obtained electronic results showed a transition from a double quantum well with a zero barrier-width into a triple-type profile after the application of the laser field, and then a return into a double-type well with a wide central barrier as the laser-dressing parameter increased. The linear and the third-order nonlinear optical absorption coefficients and refraction index were studied by density matrix method taking into account a two-level system for the ground and the first-excited states.
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