Hall Constant Measurement in Gallium Arsenide semiconductor doped with Cr and Fe used in advanced detectors
Subject Areas : Renewable energy
hassan
khaleghi
1
(دانشگاه آزاد اسلامی واحد سمنان)
Keywords: semiconductor, hall constant, advanced detectors,
Abstract :
Gallium arsenide is a compound of the elements gallium and arsenic. It is a III-V direct band gap semiconductor with a zinc blende crystal structure. GaAs is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, advanced detectors, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, aluminum gallium arsenide and others. From this view point, study of the electronic properties of GaAs single crystals is of prime importance. In this experimental work, hall Constant of two kinds of p-type GaAs samples each doped with Cr and Fe have been studied in the wide temperature range (100-400) K.
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