Design of a Low Power Temperature Sensor Based on Sub-Threshold Performance of Carbon Nanotube Transistors with an Inaccuracy of 1.5ºC for the range of -30 to 125ºC

Subject Areas : Renewable energy

Sayed Mohammad Ali Zanjani ¹ , Masoumeh Aalipour ² , Mostafa Parvizi ³

1 - Smart Microgrid Research Center- Najafabad Branch, Islamic Azad University, Najafabad, Iran
2 - Department of Electrical Engineering- Najafabad Branch, Islamic Azad University, Najafabad, Iran
3 - Department of Electrical Engineering- Najafabad Branch, Islamic Azad University, Najafabad, Iran

Received: 2021-05-04 Accepted : 2021-08-22 Published : 2021-07-23

Keywords: Low power, Carbon Nanotube Field Effect Transistor, Temperature Sensor, Sub- threshold,

Abstract :

In this paper, a new temperature sensor based on the performance of carbon nanotube transistors in the subthreshold region is designed and simulated which leads to reduction of power consumption. Also, a differential amplifier is used in the output of the sensor. in order to keep the values of gain and common mode level voltage due to temperature changes, a method has been proposed that can compensate for these parameters variation due to temperature variation in the range of -30 ºC to +125 ºC. The proposed temperature sensor with its amplifier can be used as a system on the chip surface for temperature monitoring and control. The proposed temperature sensor in the CNTFET carbon nanotube field effect transistor technology with a supply voltage of 0.5 V in the sub-threshold area is simulated by HSPICE software with a 32nm CNT model. The simulation results show that at proposed circuits can measure the temperature in range of -30 ºC to +125 ºC linearly with a sensitivity of 1 mV/ ºC and consumes only 123 nW at room temperature. Also, the error measured at 125 ºC is about 2.5 mV, which means an error of 1.25 ºC at this temperature.

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