Investigating the performance of active vector and inductor capacitors in the resonant circuit of integrated VCOs with 0.18 µmCMOS technology
Subject Areas : Electronics Engineering
najmeh
cheraghi shirazi
1
(department of electrical engineering, bushehr branch, islamic azad university, bushehr, iran)
Ebrahim
Abiri Jahromi
2
(Shiraz University of Technology)
Roozbeh
Hamzehyan
3
(department of electrical engineering, bushehr branch, islamic azad university, bushehr, iran)
Keywords:
Abstract :
Using 0.18 µm technology, CMOS transistors are designed as a VCO prototype. In the proposed VCO structure, an adjustable active inductor and a vector for the LC tank are used. The wide frequency regulation in this circuit is controlled by an adjustable active inductor and fine-tuning with a reactor.VCO with MOS vector in storage mode has the lowest power consumption and the lowest phase noise at large offset frequencies. The benefits of using MOS vectors increase significantly when more advanced CMOS technologies are selected. Due to the absence of passive elements, the fully integrated VCO takes up less chip surface area in the circuit.
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