Investigating the feasibility of using P2SiS, As2GeSe and As2GeTe nanotubes in the new generation of transistors

Subject Areas : Applications of Nanostructures

Parvin Behzadi ¹

1 - Dez dam and power plant production and operation company, Andimeshk, khozestan, Iran

Received: 2024-09-29 Accepted : 2024-11-07 Published : 2024-08-26

Keywords: Nanotube, Nanosheet, Transistor, MOSFET.,

Abstract :

This research has been done using the first-to-static method in the framework of the density functional theory and by the Quantum Espresso computing package in the generalized slope approximation. Structural properties such as lattice constant, strain energy and relative energy of formation and electronic properties such as band structure for three stack structures of P₂SiS, As₂GeSe and As₂GeTe nanosheets and nanotubes of these compounds with stack structure (10,10) have been investigated and according to the electrical characteristics The unique nanotube of these compounds in transistors, their electrical properties have been compared with carbon nanotube. Also, for As₂GeTe nanotubes, a band structure has been drawn for (4,4), (6,6), (8,8) and (10,10) structures, and then the band structure of P₂SiS, As₂GeSe and As₂GeTe nanosheets with a band structure has been drawn. Graphene has been compared. The obtained results show that the band structure of nanosheets and nanotubes of these compounds gives the band gap. Therefore, all the mentioned compounds are semiconductors. Also, by examining different diameters of As₂GeTe composite nanotubes, strip structures very close to each other have been obtained. This confirms the nearly identical band gap for different diameters for As₂GeTe nanotubes. Semiconductivity and band gap stability of P₂SiS, As₂GeSe and As₂GeTe nanotubes are two important advantages of using these nanotubes instead of carbon nanotubes in transistors.

References:


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