Defect engineering in nonmaterials could be used to modify the properties of materials for various practical applications. In this paper, the impact of linear arrangement of ISTW (LA-ISTW) defect and its position on the transport properties of grapheme nanoribbon transistors is investigated. The analysis show that creating the LA-ISTW defect with a certain density in the proper position of the channel length leads to increase the bandgap, suppress ambipolar conduction and provides the higher on-off current ratio and therefore the structure with LA-ISTW defect in the proper defect position and the specified defect density has better performance than conventional structure. The results have also demonstrated the defect engineering potential on modifying the electronic transport properties of GNR FETs. Simulations has been done based on self-consistent solution of full 3D Poisson and Schrodinger equations within the non-equilibrium Green’s function formalism. Graphene nanoribbons with non-passivated edges are used in the transistor channel. Manuscript profile

This paper introduces a novel micro-opto-electro-mechanical-systems accelerometer that leverages a tunable all-dielectric meta-material. The device operates by modulating the wavelength of incident light-wave. The utilized metamaterial takes advantage of highly tunable ultra-sharp Fano resonance peaks to create a high-performance accelerometer, offering enhanced sensitivity and resolution. Simulation results indicate the functional attributes of the proposed sensor: a mechanical sensitivity of 0.13 nm/g, a linear measurement range spanning ±38.4 g, and an overall sensitivity of 1.17 nm/g. These characteristics render the device applicable across a broad spectrum of uses, from consumer electronics to inertial navigation. This paper introduces a novel micro-opto-electro-mechanical-systems accelerometer that leverages a tunable all-dielectric meta-material. The device operates by modulating the wavelength of incident light-wave. The utilized metamaterial takes advantage of highly tunable ultra-sharp Fano resonance peaks to create a high-performance accelerometer, offering enhanced sensitivity and resolution. Simulation results indicate the functional attributes of the proposed sensor: a mechanical sensitivity of 0.13 nm/g, a linear measurement range spanning ±38.4 g, and an overall sensitivity of 1.17 nm/g. These characteristics render the device applicable across a broad spectrum of uses, from consumer electronics to inertial navigation. Manuscript profile