Superior electronic properties of graphene make it a substitute candidate for beyond-CMOS nanoelectronics in electronic devices such as the field-effect transistors (FETs), tunnel barriers, and quantum dots. The armchair-edge graphene nanoribbons (AGNRs), which have semiconductor behavior, are used to design the digital circuits. This paper presents a new design of ternary half adder based on graphene nanoribbon FETs (GNRFETs). Because of reducing chip area and integrated circuit (IC) interconnects, ternary value logic is a good alternative to binary logic. Extensive simulations have been performed in Hspice with 15-nm GNRFET technology to investigate the power consumption and delay. Results show that the proposed design is very high-speed in comparison with carbon nanotube FETs (CNTFETs). The proposed ternary half adder based on GNRFET at 0.9V exhibiting a low power-delay-product (PDP) of ~10-20 J, which is a high improvement in comparison with the ternary circuits based on CNTFET, lately proposed in the literature. This proposed ternary half adder can be advantageous in complex arithmetic circuits. Manuscript profile

Superior electronic properties of graphene make it a substitute candidate for beyond-CMOSnanoelectronics in electronic devices such as the field-effect transistors (FETs), tunnel barriers, andquantum dots. The armchair-edge graphene nanoribbons (AGNRs), which have semiconductor behavior,are used to design the digital circuits. This paper presents a new design of ternary half adder basedon graphene nanoribbon FETs (GNRFETs). Due to reducing chip the area and integrated circuit (IC)interconnects, ternary value logic is a good alternative to binary logic. Extensive simulations have beenperformed in Hspice with 15-nm GNRFET technology to investigate the power consumption and delay.Results show that the proposed design is very high-speed in comparison with carbon nanotube FETs(CNTFETs). The proposed ternary half adder based on GNRFET at 0.9V exhibiting a low power-delayproduct(PDP) of ~10-20 J, which is a high improvement in comparison with the ternary circuits basedon CNTFET, lately proposed in the literature. This proposed ternary half adder can be advantageous incomplex arithmetic circuits. Manuscript profile

This paper investigates a novel design of penternary logic gates using
carbon nanotube field effect transistors (CNTFETs). CNTFET is a suitable candidate for
replacing MOSFET with some useful properties, such as the capability of having the
desired threshold voltage by regulating the diameter of the nanotubes. Multiple-valued
logic (MVL) such as ternary, quaternary, and penternary is a promising alternative to
the binary logic design, because of less complexity, less computational step and reduced
chip area. We propose two penternary inverters which are designed in the multiplevalued
voltage mode based on CNTFET. In the first proposed design, the resistors are
used to implement penternary logic whereas, in the second proposed design, they are
replaced with the transistors. Extensive simulation results using HSPICE represent that
the two proposed designs reduce significantly the power consumption and delay and
sensitivity to process variations as compared to the state-of-the-art penternary logic
circuit in the literature. Manuscript profile

Structural, electronic, and optical properties of one-dimensional (1D) SnGe
and SnC with two types (armchair and zigzag) and different widths are studied by using
first-principles calculations. The atoms of these structures in edges are passivated by
hydrogen. The results show armchair SnGe and SnC nanoribbons (A-SnXNRs, X=Ge, C)
are the direct semiconducting and divided into three distinct families W=3p, W=3p+1,
and W=3p+2, (p is a positive integer). By increasing width, the band gaps converge to
1.71 eV and 0.15 eV for A-SnCNRs and A-SnGeNRs, respectively. Furthermore, the
position of the first peak of the dielectric function in both of them occurs in their value of
direct band gap at أ point. also, the absorption coefficient for 9, 11, 13 A-SnCNRs
displays that there is no absorption at the lower energy range from 0 to 1.2 eV, whereas
absorption characteristics for 9, 11, and 13 A-SnGeNRs appeared at near-infrared to the
visible spectrum. These results can provide important information for the use of Group
IV binary compounds in electronic devices. Manuscript profile