Abstract We investigate spin transfer torque switching in a perpendicular double barrier synthetic antiferromagnetic free layer MTJ stack using micromagnetic simulations. For the material used in free layers, we use two different Cobalt-based Heusler alloys and compare their performance on the basis of switching speed, thermal stability and Tunnel magnetoresistance. We show that for Heusler alloys switching from one state to other is significantly faster but they suffer from the drawback of low thermal stability. Manuscript profile

AbstractIn this work, we have performed first principle study on a single-molecule pentacene field effect transistor and studied various oxygen- and hydrogen-induced defects in the same device configuration. Further, we have investigated the effect of these defects on the various electronic transport properties of the device and compared them with those of the original device along with reporting the negative differential region window and the peak-to-valley ratio in different cases. For this purpose, we have applied the density functional theory in conjugation with non-equilibrium green’s function (NEGF) formalism on a 14.11 Å pentacene device to obtain the I–V characteristics, conductance curves and transmission spectra in various device scenarios. Manuscript profile