A New Feedforward Technique to Enhance Gain-Bandwidth Product

Subject Areas : Majlesi Journal of Telecommunication Devices

Leila Hatami ¹ , Abbas Golmakani ²

1 - Department of Electrical Engineering, Sadjad Institute for Higher Education, Mashhad, Iran
2 - Department of Electrical Engineering, Sadjad Institute for Higher Education, Mashhad, Iran

Received: 2014-05-24 Accepted : 2014-05-24 Published : 2014-09-01

Keywords:

References:

[1] Y. Cheng and C. Hu, “MOSFET Modeling & BSIM3 User’s Guide”. Norwell, MA: Kluwer, 1999.

[2] P. E. Allen and D. R. Holberg, “CMOS Analog Circuits Design”, 2nd ,Oxford,Oxford Univ. Press, 2002.

[3] E. A. Vittoz and J. Fellrath, “CMOS analog integrated circuits based on weak inversion operation,” IEEE J. Solid-State Circuits, Vol. SC-12, No. 3, pp. 231–244, Jun. 1977..

[4] L. H. C. Ferreira and T. C. Pimenta, “Extraction of MOS parameters from BSIM3v3 model using minimum square method for quick manual design,” Proc. IEE Circuits, Devices Syst., Vol. 153, No. 2, pp. 153–158, Apr. 2006.

[5] Luis H. C. Ferreira, T. C. Pimenta and R. L. Moreno, “An ultra-low voltage ultra-low-power CMOS Miller OTA with rail-to-rail input/output swing,” IEEE Trans. Circuits Syst. II, Exp. Briefs, vol. 54, no. 10, pp. 843-847, Oct. 2007.

[6] E.Kargaran, M.Sawan, Kh.Mafinezhad, H.Nabovati,” Design of 0.4V,386nW OTA Using DTMOS Technique for Biomedical Applications,” in the proceeding of IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS),USA, 2012.

[7] F. Assaderaghi, “DTMOS: Its derivatives and variations, and their potential applications,” in Proc. 12th Int. Conf. Microelectron., 2000, pp. 9–10.

[8] H.F.Achigui, C.J. Fayomi, M, Sawan, “1 V DTMOS Based Class AB Operational Amplifier: Implementation and Experimental Results”, IEEE Journal of Solid-State Circuits, Vol.41, No.11, November 2006, pp. 2440-2448.

[9] M. Maymandi-Nejad and Manoj Sachdev,” DTMOS Technique for Low-Voltage Analog Circuits,” IEEE Transactions on Very Larg Scale Integration (VLSI) Systems Vol. 14, No. 10, October 2006.

[10] A. G. Sabnis and J. T. Clemens, “Characterization of the electron mobility in the inverted h100i Si surface,” in IEDM Tech. Dig., Dec. 1979, pp. 18–21.

[11] M.Razzaghpour, A.Golmakani, “An Ultra-Low-Voltage Ultra-Low-Power OTA with Improved Gain-Bandwidth Product,” in proc. IEEE ICM, 2008.

[12] Sheng-Wen Pan, Chiung-Cheng Chuang, Chung-Huang Yang, Yu-Sheng Lai, “A Novel OTA with Dual Bulk- Driven Input Stage,” IEEE International Symposium on Circuits and Systems, pp. 2721-2724, May 2009.

[13] S. Sbaraini, A. Richelli and Zs.M. Kovacs-Vajna, “EMI susceptibility in bulk-driven Miller opamp,” Electronics Lette Rs , Vol. 46, No. 16, August 2010.